160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm

Sarmah, Neelanjan; Chevalier, P.; Pfeiffer, Ullrich R.

doi:10.1109/tmtt.2012.2231875

Cited by 43 publications

(21 citation statements)

References 20 publications

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“…The active devices are designed to turn ON and OFF at the same time to make sure the voltage swing across the transistors add up in phase resulting in larger overall output voltage swing and power of the PA. In [106], a state-of-the art PA, which operates beyond 120 GHz, is reported. The highest power performance is achieved by optimizing the design in device sizing, EM modeling and layout techniques.…”

Section: Pa In Cmos Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Section: Pa In Cmos Technologymentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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“…Among millimeter-wave band, D-band is especially promising for wireless communication due to the ISM band around 122 GHz and the atmospheric window with low freespace attenuation around 140 GHz. Recently, many D-band power amplifiers were reported utilizing Si/SiGe processes [3,4,5,6].…”

Section: Introductionmentioning

confidence: 99%

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

Xiao

Zhang

et al. 2017

IEICE Electron. Express

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In this paper, a D-band power amplifier (PA) based on 0.5-µm InP DHBT is presented. Wilkinson combiners with broadband steppedimpedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150 GHz with >45-GHz 3-dB power bandwidth from 125 GHz to 170 GHz. Meanwhile the 1-dB gain compression output power is 15.9 dBm at 150 GHz. The >45-GHz 3-dB power bandwidth means a great flatness of power gain which is outstanding in reported D-band PAs to our best knowledge.

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“…Owing to recent advances in the operation speed of Si-based semiconductor devices, there have been growing reports on amplifiers operating beyond 100 GHz based on Si CMOS or SiGe HBT technologies. For the amplifiers operating at this band based on SiGe HBT technology, cascode topology has been a popular choice [1,2]. On the other hand, recent reports on common-base (CB) topology reveals that it exhibits larger power gain than common-emitter (CE) topology particularly at higher frequency bands [3,4].…”

Section: Introductionmentioning

confidence: 99%

D-band Stacked Amplifiers based on SiGe BiCMOS Technology

Yun¹,

Kim

Song³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-This paper presents two 3-stage D-band stacked amplifiers developed in a 0.13-μm SiGe BiCMOS technology, employed to compare the conventional cascode topology and the common-base (CB)/CB stacked topology. AMP1 employs two cascode stages followed by a CB/CB stacked stage, while AMP2 is composed of three CB/CB stacked stages. AMP1 showed a 17.1 dB peak gain at 143.8 GHz and a saturation output power of -4.2 dBm, while AMP2 showed a 20.4 dB peak gain at 150.6 GHz and a saturation output power of -1.3 dBm. The respective power dissipation was 42.9 mW and 59.4 mW for the two amplifiers. The results show that CB/CB stacked topology is favored over cascode topology in terms of gain near 140 GHz.

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160-GHz Power Amplifier Design in Advanced SiGe HBT Technologies With ${P}_{\rm sat}$ in Excess of 10 dBm

Cited by 43 publications

References 20 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

D-band Stacked Amplifiers based on SiGe BiCMOS Technology

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