2000
DOI: 10.1109/68.849090
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16 x 10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry

Abstract: Abstract-In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated. We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection.

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Cited by 14 publications
(1 citation statement)
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“…In such instances, Amplified Spontaneous Emission (ASE) occurs from the SOA, facing a challenge to the improvement of pulse contrast. In this study, we aimed to enhance the pulse contrast of a DC-driven SOA by injecting a Continuous Wave (CW) light as Holding Beam (HB) [1][2][3][4]. Additionally, we investigated the amplification characteristics, observing optically pumped amplification resulting from the amplified HB in the SOA.…”
Section: Introductionmentioning
confidence: 99%
“…In such instances, Amplified Spontaneous Emission (ASE) occurs from the SOA, facing a challenge to the improvement of pulse contrast. In this study, we aimed to enhance the pulse contrast of a DC-driven SOA by injecting a Continuous Wave (CW) light as Holding Beam (HB) [1][2][3][4]. Additionally, we investigated the amplification characteristics, observing optically pumped amplification resulting from the amplified HB in the SOA.…”
Section: Introductionmentioning
confidence: 99%