16.0% Efficiency of large area (10cm×10cm) thin film polycrystalline silicon solar cell

Morikawa, H.; Nishimoto, Y.; Naomoto, H.; Kawama, Y.; Takami, A.; Arimoto, Suguru; Ishihara, Takashi; Namba, Keisuke

doi:10.1016/s0927-0248(98)00003-8

Cited by 28 publications

(5 citation statements)

References 3 publications

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“…The Smart-Cut allows the transfer of Si layers at a required thickness. Other kerf-free techniques also consist in the formation of a weak layer such as PSI (Porous Silicon) [12], ELTRAN (Epitaxial Layer Transfer) [13] and VEST (Via-hole Etching for the Separation of Thin-Films) [14]. However, the costs of these methods are high due to the high cost of the silicon weakening processes, required to produce free standing exfoliated Si wafers.…”

Section: Introductionmentioning

confidence: 99%

(111)Si thin layers detachment by stress-induced spallation

Zayyoun¹,

Pingault²,

Ntsoenzok³

et al. 2019

Surf. Topogr.: Metrol. Prop.

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In this work, results of controlled detachment of (111) silicon by stress induced spalling (SIS) process, which is based on a gluing on a metallic stressor layer by an epoxy adhesive on top of a silicon substrate, are presented. It is shown that silicon foils mainly (1 × 1) cm 2 with different thicknesses (~50-170 µm) can be successfully detached using different materials (steel, copper, aluminum, nickel and titanium) as stressor layers with thicknesses ~50-500 µm. Such detachment can be realized by dipping of a stressor/glue/silicon wafer based structure into liquid nitrogen. As a result, Si foils with different thicknesses from ~50 µm to ~170 µm can be detached. An analytical and numerical approaches based on principles of linear elastic fracture mechanics is developed and they are shown that such approaches can predict general trends and conditions for the detachment of silicon foils with desired thicknesses using a stressor layer. Raman spectroscopy analysis of the residual stresses in detached silicon foils shows, that tensile stresses (up to −36 MPa) as well as higher value compressive stresses (up to ~444 MPa) are present in such foils. Moreover, optical and scanning electron microscopy (SEM) measurements show that surface of the detached foils exhibits some periodic lines originated by stresses.

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Section: Introductionmentioning

confidence: 99%

(111)Si thin layers detachment by stress-induced spallation

Zayyoun¹,

Pingault²,

Ntsoenzok³

et al. 2019

Surf. Topogr.: Metrol. Prop.

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“…To increase the grain size, several postdeposition annealing processes have been developed. [2][3][4][5][6][7][8][9][10] Among these methods, energy-beam-induced liquid-phase crystallization is likely a preferred method for fabricating Si films with a large grain size of >100 µm. For example, Si TFSCs fabricated by zonemelting crystallization, electron-beam crystallization, and continuous-wave (CW)-laser crystallization have conversion efficiencies of 16, 2) 5.9, 8) and 11%, 4) respectively.…”

Section: Introductionmentioning

confidence: 99%

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Yeh¹,

Tatebe²

2015

Jpn. J. Appl. Phys.

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An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and a 50-nm-thick n+ SE-Si film were successfully grown as the light-absorbing layer and emitter layer, respectively, on a heavily doped p-Si(100) wafer to form the p–i–n junction of a solar cell (SC). Heavily doped n+ SE-Si with an electron concentration n of 3 × 1020 cm−3 was grown by cosputtering of Sb with Si. The characteristics of SE-Si grown at 310 °C was investigated in relation to annealing temperature. The oxygen concentration in SE-Si was ∼1018 cm−3, which was found to originate from the gas released in the chamber. Oxygen-induced thermal donors then became the source of n in the film, and n was reduced to 1 × 1016 cm−3 after forming-gas annealing at 700 °C because the thermal donors were neutralized by hydrogen. The SC exhibited a maximum internal quantum efficiency of 73.7%.

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“…This includes the long term stability of c-Si, the well understood electrical properties and advanced processing , known from wafer processing, which can be uses much less high purity the active area can be integrated interconnected modules [1]. This helps to decrease costs and maintain comparably high On reference material, like oxidized % have been reported [2,3]. needs a substrate capable meeting the demanding requirements on thermal-and One candidate is .…”

Section: Introductionmentioning

confidence: 99%

Recrystallized silicon thin-film solar cells on zircon ceramics

Schillinger

Janz

Reber

2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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This work describes the processing of recrystallized silicon thin-film solar cells and its typical defects. Zircon (ZrSiO4) ceramic substrates of technical grade with potential production costs of <; 20 €/m2 were used. Those substrates were encapsulated in crystalline silicon carbide, deposited by atmospheric pressure chemical vapor deposition (APCVD). The active silicon layers were also formed using APCVD. Zone-melting recrystallization (ZMR) was used to enlarge Si grains. Si films crystallized on SiC show characteristic \u7f3 twin grain boundaries parallel to the growth direction. The Si crystals achieve widths up to several mm and lengths of several cm. Solar cells made from such material achieved open circuit voltages up to 566 mV on zircon and up to 600 mV on equally processed mc-Si

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16.0% Efficiency of large area (10cm×10cm) thin film polycrystalline silicon solar cell

Cited by 28 publications

References 3 publications

(111)Si thin layers detachment by stress-induced spallation

(111)Si thin layers detachment by stress-induced spallation

Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

Recrystallized silicon thin-film solar cells on zircon ceramics

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