154  μm photoluminescence enhancenment of Er^3+-doped ZnO films containing nc-Ge: joint effect from Er^3+ local environment changing and energy transfer of nc-Ge

Fan, Rong; Lu, Fei; Li, Kaikai

doi:10.1364/prj.5.000567

Cited by 2 publications

(1 citation statement)

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“…Electroluminescence (EL) from light-emitting devices (LEDs) with erbium (Er)-doped wide band gap semiconductors has been subjected to great effort for years since the emission at ∼1540 nm, which results from the 4 I 13/2 → 4 I 15/2 transition of the Er 3+ ion, is located within the minimum-loss window of silica optical fibers. − With a wide band gap of 3.37 eV at 300 K, ZnO is believed to be a desirable matrix for accommodating rare-earth ions that act as luminescent centers. , Over the years, photoluminescence (PL) from diverse Er-doped ZnO (ZnO:Er) materials has been extensively reported. − By comparison, the ZnO:Er-related EL has been much less realized. Harako et al realized the visible and ∼1.54 μm EL from a LED based on the n-ZnO:Er/p-Si structure, which arose from the impact-excitation of Er 3+ ions .…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Xia

Chen

Zhao

et al. 2022

ACS Appl. Mater. Interfaces

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We report on the visible and near-infrared electroluminescence (EL) from the light-emitting device (LED) based on the erbium (Er)-doped ZnO (ZnO:Er)/SiO2/n+-Si heterostructure, wherein an ∼10 nm thick SiO2 intermediate layer serves as the energy plateau for producing hot electrons, which come from n+-Si via the trap-assisted tunneling mechanism. These hot electrons excite the doped Er3+ ions by inelastic collision, enabling the Er-related EL from the aforementioned LED. More importantly, by means of codoping the appropriate content of titanium (Ti) into the ZnO:Er film, the aforementioned Er-related emissions can be significantly enhanced. The density functional theory calculations indicate that the Ti-codoping improves rather than degrades the symmetry of the crystal field around the optically active Er3+ ions, hence not increasing the intra-4f transition probabilities of Er3+ ions. However, it is found that Ti-codoping nearly eliminates the segregation of Er3+ ions near the ZnO/SiO2 interface. Moreover, Ti-codoping is derived to result in a number of Zn vacancies, which provide the sites for incorporating Er3+ ions in the ZnO matrix. For the above two reasons, the Ti-codoping promotes the incorporation of optically active Er3+ ions into the ZnO matrix, thus enhancing the EL from the aforementioned LED.

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