150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures

Lei, Qi; Aierken, Abuduwayiti; Sailai, M.; Heini, M.; Shen, X. B.; Zhao, Xuyi; Hao, Rui; Mo, Jing; Zhuang, Yu; Guo, Qiang

doi:10.1016/j.optmat.2019.109375

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…The efficiency of access networks is related to the performance of optoelectronic devices. Moreover, their performance can be analyzed and optimized by establishing specific models, which can improve the efficiency of access networks [3,4]. A model based on the density functional theory was proposed to describe the electrochemical performance of cathode materials (Gao et al).…”

Section: Modeling Of Optoelectronic Devices For Access Networkmentioning

confidence: 99%

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Zhang

Rooij

et al. 2021

Front. Phys.

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Editorial on the Research Topic Modeling and Applications of Optoelectronic Devices for Access NetworksWith the development of optical devices and advanced materials, optoelectronic devices can be newly reconsidered and improved since these are indispensable for access networks. Specifically, the modeling and applications of optoelectronic devices play an important role in promoting the development of access networks. Therefore, this Research Topic reports on the latest developments in the modeling and applications of optoelectronic devices.

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Section: Modeling Of Optoelectronic Devices For Access Networkmentioning

confidence: 99%

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Zhang

Rooij

et al. 2021

Front. Phys.

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“…Measuring the radiation sensitivity of InGaAsN towards space representative irradiation is then essential to evaluate the end of life (EOL) efficiency of the MJSC. While several studies reported the effect of electron irradiation on InGaAsN solar cells [9,[11][12][13], the impact of protons was only investigated for lattice-mismatched dilute nitrides with very low nitrogen content (<0.5%) [14,15]. In order to fill this lack in the literature and quantify the radiation hardness of InGaAsN towards proton irradiation, we propose a study combining device characterization (I-V and external quantum efficiency (EQE) measurements) with material characterization (photoluminescence (PL) and deep-level transient spectroscopy (DLTS) measurements).…”

Section: Introductionmentioning

confidence: 99%

Impact of 1 MeV proton irradiation on InGaAsN solar cells

Levillayer¹,

Duzellier²,

Massiot³

et al. 2022

Semicond. Sci. Technol.

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The impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells was studied through device and material characterizations. After a 1013 p+/cm2 proton fluence, the photocurrent decreases by 28 %, due to the formation of defects in both the GaAs emitter and the InGaAsN absorber. Furthermore, photoluminescence measurements suggest that the proton radiation hardness of InGaAsN increases with the nitrogen content.

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“…Heat is generated during devices operation, resulting in higher device temperature and thermal droop. Building some specific models to reduce the thermal droop can effectively boost the efficiency of the devices and promote the energy saving [7][8][9]. A model based on thermal transport effects is proposed to study electron transports and transport efficiency of LEDs under high and low bias voltages.…”

mentioning

confidence: 99%

Editorial: Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices

Chi

Long

2021

Front. Phys.

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To improve the performances of an electro-optical conversion device, a physical model of the same is needed. In fact, once an appropriate model is built, the optimization of the device design is possible. In particular, electrochemical properties are very relevant to the efficiency of electro-optical conversion devices. It has been shown that impurity doping is an effective method of improving electrochemical performance [1][2][3][4]. An Al-doping ternary cathode material model based on first principles density functional theory is proposed to improve the electrochemical performance of the device (Gao et al.). In this model, Al doping provides the ternary cathode material with better electrical conductivity and cycling ability, therefore results in a significant improvement in the rate performance of the material. On this basis, considering that Li-rich Mn-based oxides are also commonly used cathode materials for battery modules of electro-optical conversion devices, a similar model is established to simulate the effects of changing sodium doping amounts on the electrochemical properties of the oxide (Gao et al.). The results show that the conductivity is larger when the sodium doping amount is 0.1 mol. In addition, a model is developed to prepare n − -n + photodiodes by growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate (Zhao et al.). Specifically, impurity doping can improve the physical and electrochemical properties of conventional materials, leading to an increase in the efficiency of electro-optical conversion devices [5,6].At the same time, high self-heating and low heat dissipation are the critical issues needed to be addressed during the operation of electro-optical conversion devices. Heat is generated during devices operation, resulting in higher device temperature and thermal droop. Building some specific models to reduce the thermal droop can effectively boost the efficiency of the devices and promote the energy saving [7][8][9]. A model based on thermal transport effects is proposed to study electron transports and transport efficiency of LEDs under high and low bias voltages. When the applied voltage is lower than the photon voltage, heat generated in the circuit is exchanged and absorbed by carriers. This allows to improve the efficiency of the whole system through energy recovery and heat collection (Lu et al.). The new model can act as the research prototype to design high-efficient LED arrays for better energy recycling and thermal control. Based on the concept of heterostructure, a model is proposed to obtain a new type of nanowire (NW) photoanode by strong enhancement of the photocurrent in solar water splitting.

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150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures

Cited by 6 publications

References 29 publications

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Impact of 1 MeV proton irradiation on InGaAsN solar cells

Editorial: Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices

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150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures

Cited by 6 publications

References 29 publications

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Editorial: Modeling and Applications of Optoelectronic Devices for Access Networks

Impact of 1 MeV proton irradiation on InGaAsN solar cells

Editorial: Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices

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150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures