2018
DOI: 10.1109/tmtt.2018.2859983
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15-Gb/s 50-cm Wireless Link Using a High-Power Compact III–V 84-GHz Transmitter

Abstract: The paper reports on a 15 Gbps wireless link that employs a high power resonant tunneling diode (RTD) oscillator as a transmitter. The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The reported performance is over a 50 cm link, with simple amplitude shift keying (ASK) modulation utilized. The 15 Gbps data link shows correctable bit error rate (BER) of 4.1×10-3 , while lower data rates of 10 Gbps and 5 Gbps shows BER of 3.6×10-4 and 1.0×10-6 , respecti… Show more

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Cited by 25 publications
(10 citation statements)
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“…In many cases, an SBD detector is used at the Rx while, in some other cases, an UTC-PD is employed at the Tx. The longest link distances of 50 cm [92], 80 cm [165], and 150 cm [166] feature Tx operating below 0.3 THz. For higher carrier frequencies f c , link distances are under 30 cm.…”
Section: A Wireless Systems Architecturementioning
confidence: 99%
“…In many cases, an SBD detector is used at the Rx while, in some other cases, an UTC-PD is employed at the Tx. The longest link distances of 50 cm [92], 80 cm [165], and 150 cm [166] feature Tx operating below 0.3 THz. For higher carrier frequencies f c , link distances are under 30 cm.…”
Section: A Wireless Systems Architecturementioning
confidence: 99%
“…Josephson junctions [10], micropillar lasers [24], excitable semiconductor lasers, including a graphene laser with saturable absorber [25], quantum-dot laser [26][27][28], microring resonators [29], vertical cavity surface emitting lasers (VCSELs) [30][31][32] and multi-section VCSELs with saturable absorber [33,34]. Table I (PDC) [36] as shown in Fig. 1d.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the probability for an incident electron to cross the barrier and thus the mean current across the RTD are locally maximized for certain voltages. Consequently, the I-V characteristic exhibits one or more finite regions of negative differential conductance [27,28]. In this study we assume the case of a DBQW with AlAs barriers and an InGaAs quantum well.…”
Section: Theoretical Modelmentioning
confidence: 99%
“…This corresponds to the nanoRTD biased with a constant input voltage. It is well known from the literature that micro and nanoscale RTDs exhibit self-oscillations (i.e., limit cycle) in both current and voltage when biased in the NDC region and respond with a constant, DC output (i.e., fixed point of equilibrium) when biased in either PDC region [28,[34][35][36][37]. Numerical simulations show that, the specific range of input bias voltage for which the RTD presented here exhibits self-oscillations lies in between V 0 = 613 mV and V 0 = 722.9 mV (see Fig.…”
Section: Self-oscillations and Slow-fast Dynamicsmentioning
confidence: 99%