15.3: Asymmetric Conductance of Oxide Thin‐Film Transistors Induced by Top‐Gate Effect of Drain Overlap Capacitance

Abstract

IGZO TFT has been widely used in flat‐panel displays and its good electrical characteristics are the key to make high‐performance products. This paper investigated the influence of Top‐Gate effect caused by drain overlap capacitance on the transfer characteristic and output characteristic of IGZO TFT (W/L=15.6um/8um) by experimental measurements and TCAD simulations.