2017
DOI: 10.2172/1356280
|View full text |Cite
|
Sign up to set email alerts
|

1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
2
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…It is a multi-crystalline silicon wafer growing technology which forms a wafer directly from molten silicon in a bath-like furnace, with the ability to locally control wafer thickness. Thus, it can produce thin wafers with thick edge 26,27 . However, it suffers from serious problems: low bulk lifetime, high total thickness variation (TTV) and difficulty in growing very thin framed wafers 27 .…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…It is a multi-crystalline silicon wafer growing technology which forms a wafer directly from molten silicon in a bath-like furnace, with the ability to locally control wafer thickness. Thus, it can produce thin wafers with thick edge 26,27 . However, it suffers from serious problems: low bulk lifetime, high total thickness variation (TTV) and difficulty in growing very thin framed wafers 27 .…”
mentioning
confidence: 99%
“…Thus, it can produce thin wafers with thick edge 26,27 . However, it suffers from serious problems: low bulk lifetime, high total thickness variation (TTV) and difficulty in growing very thin framed wafers 27 . Recently, a technique of blunting pyramidal structure in the marginal regions was proposed by Liu et al for thin silicon solar cells with a thickness of around 60 μm 2 .…”
mentioning
confidence: 99%