This paper presents a concept of a circuit harvesting highenergy plasma and operating during its semiconductor fabrication process, namely Fetal-Movement Circuit (FMC). The plasma current collection antenna is designed to be a comb shape for area saving. This enables the FMC related circuits to be placed within a dicing street for suppressing its area penalty to be almost zero. A self-programing oxide-breakdown Physically Unclonable Function (PUF) has been implemented as one of the FMC applications. The successful PUF programing operation during fabrication has been demonstrated.