2014
DOI: 10.1002/j.2168-0159.2014.tb00043.x
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13.3L: Late‐News Paper: Roll‐to‐Roll Processed and Top‐Gate‐Structured Amorphous InGaZnO TFTs with Large Source/Drain Offsets

Abstract: In this article, we described a roll-to-roll (R2R)

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Cited by 7 publications
(5 citation statements)
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“…Since the ASAIL process in this study is a self-aligned process, no separate alignment is necessary and therefore the pattern size change during the imprint process is not a problem. According to the literature, a typical TFT fabrication process using a R2R photolithography has been reported to produce misalignment of 5∼10 μm at each process step [6]. Furthermore, when considering the mechanical deformation of the plastic substrates such as PI, PEN, or PET, the alignment error is expected to be about 100 μm when the substrate width is 100 mm.…”
Section: Inspection and Analysis Of Fabricated Tftmentioning
confidence: 99%
“…Since the ASAIL process in this study is a self-aligned process, no separate alignment is necessary and therefore the pattern size change during the imprint process is not a problem. According to the literature, a typical TFT fabrication process using a R2R photolithography has been reported to produce misalignment of 5∼10 μm at each process step [6]. Furthermore, when considering the mechanical deformation of the plastic substrates such as PI, PEN, or PET, the alignment error is expected to be about 100 μm when the substrate width is 100 mm.…”
Section: Inspection and Analysis Of Fabricated Tftmentioning
confidence: 99%
“…[1][2][3][4] Among them, amorphous oxide thin-film transistor (TFT) has attracted attention recently due to its superior electrical mobility, lower power consumption, transparency, and large-area application. [5][6][7][8] Despite these advantages, residual issues needed to be solved have remained such as leakage current at zero gate-source bias, electrical, and photo reliability. 1,3,7 To overcome these issues, we have proposed several GIP schemes and successfully developed and produced large-area OLED display with oxide backplane.…”
Section: Introductionmentioning
confidence: 99%
“…For the long history of display, several research and technological development of conventional GIP have been performed . Among them, amorphous oxide thin‐film transistor (TFT) has attracted attention recently due to its superior electrical mobility, lower power consumption, transparency, and large‐area application . Despite these advantages, residual issues needed to be solved have remained such as leakage current at zero gate‐source bias, electrical, and photo reliability .…”
Section: Introductionmentioning
confidence: 99%
“…The oxide TFT has attracted more and more attention because of its higher mobility comparing to amorphous Si TFT and better uniformity comparing to polycrystalline Si TFTs [1][2][3][4], and the oxide TFT has been used in AMOLED television backplane popularly [5]. Because of the higher mobility of oxide TFT, current change caused by slight variation of Vth will lead obvious display abnormal in AMOLED panel.…”
Section: Introductionmentioning
confidence: 99%