1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Singh, Ranbir; Jeliazkov, Stoyan; Lieser, Eric

doi:10.4028/www.scientific.net/msf.717-720.1127

Cited by 13 publications

(11 citation statements)

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“…The SJTs were triggered by an off-the-shelf Si IGBT Gate driver. A 100 nF dynamic capacitor connected across a 22 Ω Gate resistor provided high transient currents for fast sub-20 ns SJT switching (see ref [1] for more details on the Gate drive scheme). For the forced-avalanche mode tests, an unclamped inductive load test setup [1] was used.…”

Section: Methodsmentioning

confidence: 99%

“…Previously [1], a single-pulse avalanche energy rating of 20.4 mJ by unclamped inductive switching of a 1200 V/5 A SiC SJT was reported. In this work, the stability of the blocking I-V characteristics after both single-pulse and repetitive avalanche regime operation is investigated.…”

Section: Avalanche Ruggednessmentioning

confidence: 99%

“…1200 V/5 A rated SiC SJTs with current gains (β) as high as 88, and ultra-fast switching times of < 15 ns were recently reported [1]. In this study, a comprehensive evaluation of the stability of the SJT electrical characteristics after long-term operation is presented.…”

Section: Introductionmentioning

confidence: 99%

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Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

2012

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The reliability of the electrical characteristics of SiC "Super" Junction Transistors (SJTs) is investigated under long-term avalanche-mode, DC and pulsed-current operation. There is absolutely no change in the blocking I-V characteristics after a 934 hour repetitive avalanche stress test. Long-term operation of the Gate-Source diode (open-Drain mode) alone does not result in any degradation of the on-state voltage drop (V F ) or current gain (β). Long-term operation in common-Source mode results in negligible V F or β degradation, if the base-plate is maintained at 25 °C. A greater degradation of β results with increasing base-plate temperature. The same total electrical charge, if passed through the SJT as a pulsed current instead of a DC current results in a smaller β reduction. It is also shown that this β degradation can be reversed by annealing at ≥ 200 °C, suggesting the possibility of degradation-free operation of SiC SJTs, when operating in pulsed current mode at ≥ 200 °C temperatures.

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Section: Methodsmentioning

confidence: 99%

Section: Avalanche Ruggednessmentioning

confidence: 99%

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Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

2012

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“…1200-V/5-A-rated SiC BJTs with current gains β as high as 88 and ultrafast switching times of < 15 ns were recently reported [1]. In this paper, a comprehensive evaluation of the stability of the BJT current gain β after long-term operation is presented.…”

Section: Introductionmentioning

confidence: 96%

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

Sundaresan

Soe

Jeliazkov

et al. 2012

IEEE Trans. Electron Devices

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The stability of the electrical characteristics of SiC n-p-n bipolar junction transistors (BJTs) is investigated under long-term avalanche-mode, dc, and pulsed-current operation. There is absolutely no change in the blocking I-V characteristics after a 934-h repetitive avalanche stress test. Long-term operation of the base-emitter diode (open-collector mode) alone does not result in any degradation of the ON-state voltage drop V F or current gain β. Long-term operation in common-emitter mode results in negligible V F or β degradation, if the base plate is maintained at 25 • C. A greater degradation of β results upon increasing the base-plate temperature. The same total electrical charge, if passed through the BJT as a pulsed current, instead of a dc current, results in smaller β reduction. It is also shown that the β degradation can be reversed by annealing at ≥ 200 • C, suggesting the possibility of degradation-free operation of SiC BJTs, when operating in pulsed current mode at ≥ 200 • C temperatures.

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“…This device, commonly used in electrical traction units, is currently designed and manufactured using IGBT (Insulated Gate Bipolar Transistor) transistor technology. By achieving high reliability and electrical efficiency, technology widely used since the mid-1990s is now recognised as a market standard and used by most manufacturers of electronic components [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

Section: Technology Of Silicon Carbide Components (Sic)mentioning

confidence: 99%

The latest generation drive for electric buses powered by SiC technology for high energy efficiency

Biliński¹

2018

MATEC Web of Conferences

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Abstract. High energy efficiency and increasing the working frequency of the converter will make it possible to minimize the size of the cooling system and reduce energy consumption. The use of the SiC technology in propulsion drives increases the efficiency of the converter by 1÷1.5%. Simultaneously, higher working frequency reduces losses in the traction motor, significantly lowering the cost of the energy consumed by the vehicle. Auxiliary converters using the SiC technology are a new quality. The reduction of weight and size is very significant (ca. 40÷50%). Higher switching frequency reduces the size of magnetic components (ca. 80%), and higher converter efficiency minimizes the size of the cooling system. The overall efficiency of the converter is extremely high (94÷96%). This paper presents comparison of Si and SiC parameters which are important for modern EV solutions. Paper presents also parameters of SiC traction inverter and auxiliary converter, designed and manufactured as state-of-the-art product for modern electric bus.

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1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Cited by 13 publications

References 0 publications

Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

The latest generation drive for electric buses powered by SiC technology for high energy efficiency

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