11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength

A 19-Gb/s, 1.8-V Optical Receiver Front-End Comprised of a Ge-on-SOI Photodiode and a CMOS Transimpedance Amplifier

“…A substantial amount of research on producing highperformance CMOS receivers has been undertaken, motivated by the attractive aspects of Si CMOS technology: established high-volume and low-cost manufacturing, low power consumption, high reliability, and continually-increasing speed. Monolithically integrated Si-receivers have been demonstrated to operate at bit rates as high as 11 Gb/s but have required photodiode bias voltages of more than 15 V [1], [2]. The poor optical absorption of Si at λ = 850 nm imposes a fundamental bandwidth/responsivity tradeoff for integrated Si detectors, spurring interest in Geon-Si photodiodes.…”

Optical Receivers in CMOS Using Ge-on-SOI Photodiodes

“…Although we have quoted receiver sensitivity throughout this work at a BER of 10 -12 , in Fig. 1, the sensitivities are quoted at a BER of 10 -9 to maintain consistency with the literature [1], [2]. As Fig.…”

“…1 provides a summary of the measured sensitivities of our three receivers as a function of bit-rate. The reported sensitivities of two recent all-silicon receivers capable of ~10 Gb/s operation are also included for reference [1], [2]. Although we have quoted receiver sensitivity throughout this work at a BER of 10 -12 , in Fig.…”

“…For instance, all-silicon receivers have been shown to operate at 10 Gb/s, but very high photodiode bias voltages (> 20 V) were needed to achieve this performance [1]. More recently, analog equalization has been used to compensate for the limited integrated photodiode bandwidth, and an 11-Gb/s monolithically integrated receiver has been reported, but also used a large photodiode bias of 17 V [2]. Even higher performance is expected using advanced CMOS generations, due to the increased transistor speed resulting from device scaling.…”

A Gigabit Optical Receiver with Monolithically Integrated Photodiode in 0.18 ¿m CMOS

“…In literature, excellent high-speed BiCMOS monolithical implementations can be found [2]. However, this technology still requires additional process steps to enhance the photodiode performance, which also means an increased cost.…”