2018 IEEE 27th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) 2018
DOI: 10.1109/epeps.2018.8534221
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112G PAM4/56G NRZ Interconnect Design for High Channel Count Packages

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Cited by 12 publications
(3 citation statements)
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“…Since multiple dies are stacked in the HBM, there are more interconnects that are required, and there are unique challenges which can be distinguished from a conventional interconnects, which means there are plenty of works that the interconnect design has to do. For example, the stacked DRAM is communicating with processing unit through the silicon interposer channel, which is quite different to the conventional channels such as channel response and crosstalk ( Ko et al, 2020 ; Liu, Ding & Jiang, 2018 ). In addition, the stacked DRAM dies are connected by TSV links whose characteristic is also very different ( Lee et al, 2015 , 2016 ; Kim et al, 2012 ).…”
Section: Memory and Storagementioning
confidence: 99%
“…Since multiple dies are stacked in the HBM, there are more interconnects that are required, and there are unique challenges which can be distinguished from a conventional interconnects, which means there are plenty of works that the interconnect design has to do. For example, the stacked DRAM is communicating with processing unit through the silicon interposer channel, which is quite different to the conventional channels such as channel response and crosstalk ( Ko et al, 2020 ; Liu, Ding & Jiang, 2018 ). In addition, the stacked DRAM dies are connected by TSV links whose characteristic is also very different ( Lee et al, 2015 , 2016 ; Kim et al, 2012 ).…”
Section: Memory and Storagementioning
confidence: 99%
“…Since multiple dies are stacked in the HBM, there are more interconnects that are required, and there are unique challenges which can be distinguished from a conventional interconnects, which means there are plenty of works that the interconnect design has to do. For example, the stacked DRAM is communicating with processing unit through the silicon interposer channel, which is quite different to the conventional channels such as channel response and crosstalk [61], [69]. In addition, the stacked DRAM dies are connected by TSV links whose characteristic is also very different [70]- [72].…”
Section: A Memory Scaling Limit and 3-d Integrationmentioning
confidence: 99%
“…Since multiple dies are stacked in the HBM, there are more interconnects that are required, and there are unique challenges which can be distinguished from a conventional interconnects, which means there are plenty of works that the interconnect design has to do. For example, the stacked DRAM is communicating with processing unit through the silicon interposer channel, which is quite different to the conventional channels such as channel response and crosstalk [61], [69]. In addition, the stacked DRAM dies are connected by TSV links whose characteristic is also very different [70]- [72].…”
Section: A Memory Scaling Limit and 3-d Integrationmentioning
confidence: 99%