110 GHz amplifiers based on compact coplanar W-band receiver technology

Schlechtweg, N.; Haydl, W.H.; Braunstein, J.; Tasker, P.J.; Bangert, A.; Reinert, W.; Verweyen, L.; Maßler, H.; Seibel, J.; Zufle, K.; Bronner, W.; Fink, Thomas; Hulsmann, A.; Hofmann, Peter; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.

doi:10.1109/gaas.1995.528997

Cited by 17 publications

References 11 publications

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Monolithic millimetre wave ICs for 100 GHz

Haydl

1998

III-Vs Review

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The millimetre wave frequency spectrum between 30 and 300 GHz is finding growing uses in a variety of applications.The atmospheric absorption of millimetre waves, with its characteristic minima around 35 and 94 GHz, has promoted a great detal of research and development at these frequencies. Attractive system properties, such as smaller wavelength and thus higher resolution and smaller antenna size, have driven the research activities at 94 GHz.Active and passive millimetre wave systems are required for object detection, terrain imaging, communication, data transmission, level sensors, and a number of applications where infrared (IR) systems are inadequate, such as in fog, smog and smoke

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Monolithic millimetre wave ICs for 100 GHz

Haydl

1998

III-Vs Review

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Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs

Schlechtweg

Haydl

Bangert

et al. 1996

IEEE J. Solid-State Circuits

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Mixed signal integrated circuits based on GaAs HEMTs

Thiede

Zhigong

Schlechtweg

et al. 1998

IEEE Trans. VLSI Syst.

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During the past five years numerous mixed signal integrated circuits (IC's) have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array

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110 GHz amplifiers based on compact coplanar W-band receiver technology

Cited by 17 publications

References 11 publications

Monolithic millimetre wave ICs for 100 GHz

Monolithic millimetre wave ICs for 100 GHz

Coplanar millimeter-wave ICs for W-band applications using 0.15 μm pseudomorphic MODFETs

Mixed signal integrated circuits based on GaAs HEMTs

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