11.4 dB isolation on an amplifying AlGaInAs/InP optical waveguide isolator

Abstract

11.4dB optical isolation combined with forward transparency is demonstrated on a TMmode amplifying AlGaInAs/InP optical waveguide isolator operating at 1300nm. Basis for this isolator configuration is non-reciprocal absorption caused by the magneto-optic Kerr effect.

Amplifying Waveguide Optical Isolator With an Integrated Electromagnet

“…Low electrical resistivity of the metal-semiconductor contact combined with minor additional absorption is provided by a hybrid Be p -doped In Ga As P -In Ga As bilayer [6]. Proper design of the thickness of the top cladding layer and the two separate confinement heterostructure layers gives the optimized theoretical performance; 62 mA suffices to achieve transparency on a 2-mm-long isolator providing 10-dB optical isolation [7], where the ridge width was set at 2 m.…”