2018
DOI: 10.1002/aelm.201800077
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11,11,12,12‐Tetracyanonaphtho‐2,6‐quinodimethane in Contact with Ferromagnetic Electrodes for Organic Spintronics

Abstract: spintronics, several novel concepts and devices have also been exploited for different applications, for example, the realization of optically tunable MR promises the integration of the ultralow-power high-speed data writing and interchip communication; [1] graphene-based spintronic device shows promising solution for low-power devices beyond complementary metal-oxide-semiconductor (CMOS) by manipulating the pure spin current. [2] In addition, spins can act as mediators to interconvert electricity, light, soun… Show more

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Cited by 4 publications
(3 citation statements)
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“…二是能够实现高真空蒸镀成膜的自旋交叉配合物依然 很缺乏, 因为实现自旋转变的前提是配位场不能太强, 这样使得自旋交叉配合物的热稳定性通常较差, 如果要 求稳定性好, 需要有较强的配位场, 但是这样又不利于 自旋转变的发生, 因此如何在配位场强度和热稳定性之 间找到一种平衡就很重要. 三是衬底与自旋交叉配合物 的界面研究十分缺乏, 对于界面相互作用的理解还很不 清楚, 使得基于界面的纳米器件难以深入研究 [90][91][92][93][94]…”
Section: 其他自旋交叉配合物unclassified
“…二是能够实现高真空蒸镀成膜的自旋交叉配合物依然 很缺乏, 因为实现自旋转变的前提是配位场不能太强, 这样使得自旋交叉配合物的热稳定性通常较差, 如果要 求稳定性好, 需要有较强的配位场, 但是这样又不利于 自旋转变的发生, 因此如何在配位场强度和热稳定性之 间找到一种平衡就很重要. 三是衬底与自旋交叉配合物 的界面研究十分缺乏, 对于界面相互作用的理解还很不 清楚, 使得基于界面的纳米器件难以深入研究 [90][91][92][93][94]…”
Section: 其他自旋交叉配合物unclassified
“…Nevertheless, despite the chimeric nature and attractive chemo-physical properties of the QDM compounds, many research groups have prepared tens of QDM derivatives [7][8][9][10][11] exhibiting various degrees of stability under ambient conditions. As a result, QDM-based molecular systems have been useful in applications that range from spintronics [12,13] and optoelectronics devices. [14][15][16][17] The diradicaloid species of QDM could be obtained upon photoexcitation, but these species may become relatively unstable under ambient conditions.…”
Section: Introductionmentioning
confidence: 99%
“…This is mainly because the weak v an der Waals forces between organic molecules in an OSSC 22 mean it shows poor thermal resistance, and it is easily damaged by the thermal energy and kinetic energy of metal atoms during the fabrication of the OSV. 55,56 At present, the FM materials are normally deposited via thermal evaporation, 57–60 e-beam evaporation, 53,54,61–64 and magnetron sputtering, 5,26,31,57–60 all of which possess very high thermal and kinetic energy. These high-energy preparation methods can cause the deconstruction and sublimation of the OSSC, as shown in Fig.…”
Section: Fabrication Techniques For Spintronic Devices Based On Osscsmentioning
confidence: 99%