11.1 Quantum dot diode lasers

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

“…As is seen from figure 5, the growth of Q caused by p-doping leads to an increase of the maximal output power emitted via QD GS optical transition, which is in qualitative agreement with the results presented in figure 3. More details can be seen from f e1 (Q) dependence (dashed lines on figure 5): positive charging of QD decreases f e1 value (see (1)) and, therefore, increases W 1 according to (5a).…”

“…During recent decades, tremendous progress has been made in the field of quantum dot (QD) lasers. InAs/InGaAs QD lasers operating in the 1.2-1.3 μm optical region showed lower threshold current densities, higher output powers, lower Henry factor and higher temperature stability as compared to InP based counterparts [1]. 1.3 μm InAs/InGaAs QD lasers have demonstrated temperature-independent 10 Gb s −1 data transmission up to 21 km [2].…”