Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2011 2011
DOI: 10.1364/nfoec.2011.jtha033
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10Gb/s Silicon Modulator Based on Bulk-Silicon Platform for DRAM Optical Interface

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Cited by 10 publications
(5 citation statements)
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“…Consequently, we implemented the electrical router separately in the register-transfer level (RTL) code, underscoring the hardware implementation complexity involved in the logic area and power consumption. Laser wall plug efficiency (Le) 0.25 [47] Transceiver bandwidth per wavelength 10 Gb/s [4] Maximum number of wavelengths 4…”
Section: Discussionmentioning
confidence: 99%
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“…Consequently, we implemented the electrical router separately in the register-transfer level (RTL) code, underscoring the hardware implementation complexity involved in the logic area and power consumption. Laser wall plug efficiency (Le) 0.25 [47] Transceiver bandwidth per wavelength 10 Gb/s [4] Maximum number of wavelengths 4…”
Section: Discussionmentioning
confidence: 99%
“…An optical transceiver with a bandwidth of 10 Gb/s per wavelength is used as the optical network interface [4]. Except for OWBM, the remaining comparison groups used an electrical router with 5-stage pipelines consisting of buffer write, route computation, switch allocation, switch traversal, and link traversal, with an operating clock frequency of 1 GHz.…”
Section: Discussionmentioning
confidence: 99%
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“…Content may change prior to final publication. Photodetector sensitivity −20 dBm [40] Power margin of laser 13 dB [41] Transceiver bandwidth 10 Gb/s [42] Laser wall plug efficiency(Le) 0.25 [41] According to [34], the MR heating power is a quarter of the laser power. Taking this relationship into account, we determine the importance factors I 1 , I 2 , and I 3 of (2) in Section III.A for 0.5, 0.4, and 0.1, respectively.…”
Section: Discussionmentioning
confidence: 99%
“…In recent years, experimental results have been reported of all-optical or direct electrical modulation [7][8][9] at the communication wavelengths, in poly-Si-based thin-film devices. However, waveguides made of as-deposited poly-Si introduce high optical losses from scattering at the grain boundaries, and the thermal crystallization temperature (∼1100 • C) necessary to maximize the optical and electronic material properties is above the suggested limit of 400 • C set for safe back-end integration [10,11].…”
Section: Introductionmentioning
confidence: 99%