2017
DOI: 10.1049/el.2017.1165
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1060 nm single‐mode vertical‐cavity surface‐emitting laser operating at 50 Gbit/s data rate

Abstract: An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/s at an energy dissipation of 100 fJ/bit is demonstrated for a device with >50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.

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Cited by 17 publications
(12 citation statements)
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References 10 publications
(9 reference statements)
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“…These results were exceeded in 2016 with 50 Gbps at 85°C for a 980 nm VCSEL [39]. For 1060 nm VCSELs, Chalmers reported a data rate of 40 Gbps at 85°C [70].…”
Section: B High-temperature Vcselsmentioning
confidence: 96%
“…These results were exceeded in 2016 with 50 Gbps at 85°C for a 980 nm VCSEL [39]. For 1060 nm VCSELs, Chalmers reported a data rate of 40 Gbps at 85°C [70].…”
Section: B High-temperature Vcselsmentioning
confidence: 96%
“…The 1060 nm VCSEL design [14] is partly based on a previous 850 nm high-speed oxide-confined VCSEL design [16] with strong transverse current confinement. Together with the weak transverse optical confinement used in the 1060 nm design, this enables SM operation with a relatively large oxide aperture.…”
Section: Nm Sm Vcsel Designmentioning
confidence: 99%
“…The VCSEL technology employs weak transverse confinement of the optical fields and strong transverse confinement of the current to promote SM operation. With SM VCSELs, BTB transmission up to 50 Gbps has been demonstrated [14]. [15].…”
mentioning
confidence: 99%
“…At this wavelength, fibre performance in terms of chromatic dispersion and attenuation improves compared to 850 nm and the solution would benefit from the cost and power consumption advantages of the GaAs‐based VCSEL technology. 1060 nm GaAs VCSELs offer power efficiency, modulation speeds reaching 50 Gbit/s and large‐scale fabrication volumes [6].…”
Section: Introductionmentioning
confidence: 99%
“…The two signals were combined directly after the amplifiers to minimise reflections. This driving signal fed the 1060 nm oxide-confined single-mode VCSEL with a small-signal modulation bandwidth of 22 GHz, and an aperture size of 4 µm, similar to the device presented in [6]. The VCSEL was biased at 4 mA, producing an optical output power of 3 dBm.…”
mentioning
confidence: 99%