100GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology using 250nm InP DHBTs and 130nm CMOS

Progress and challenges in the direct monolithic integration of III–V devices and Si CMOS on silicon substrates

“…Recently, investigators have successfully demonstrated heterogeneous integration of InP HBTs and Silicon CMOS using variations on wafer bonding techniques [1,2] where the III-V eptaxial layers or completed devices are bonded to the surface of a completed Si CMOS wafer. A more attractive approach is the direct integration of CMOS and III-V devices on a common silicon substrate (Fig 1, right).…”