(100) Oriented Poly‐Si Film Grown by Ultrahigh Vacuum Chemical Vapor Deposition

Abstract

Poly-Si films are grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) with plasma-seeding on SiO2. The preferred grain orientations are investigated as a function of thickness, source gas flow rate, and growth temperature. The poly-Si fills show (100) preferred orientation in a wide range of growth conditions. The (100) orientation increases as thickness and flow rate increases and decreases as temperature increases. UHV-CVD and other deposition methods are compared in order to estimate the role of hydrogen and oxygen as factors controlling the preferred grain orientation.

Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering

“…1 Tanikawa and Tatsumi reported using a plasma seeding technique carried out using a nude ion gauge in a disilane atmosphere. 2 Matsumoto et al utilized ͗111͘ oriented ZnS buffer layers, grown using diethyl zinc ͑DEZ͒ and H 2 S precursors, before initiating bulk film growth. 3 Using a similar approach, this study reports on lowtemperature poly-Si thin film deposition through interface engineering, or two-stage processing.…”

The influences of thickness on piezoresistive properties of poly-Si nanofilms

“…Although x-ray diffraction spectra of (100) orientation has been covered with that of Si substrate, other orientations are evenly weak, which implies that the nanofilm is so thin that it has not preferred orientations yet. This result can be demonstrated by Tanikawa et al 9 's study that the film does not have preferred orientations when the film thickness is under 100nm. The SEM images reported in Fig.2 show that both the grain size of 90nm nanofilm and that of 60nm nanofilm are very close, which are between 40nm and 50nm, and the grain size of 40nm nanofilm is between 20 and 30nm.…”

Properties of non‐stoichiometric nitrogen doped LPCVD silicon thin films

“…The integrated intensity measured must be corrected by an absorption factor, which takes account the fact that the films are not infinitely thick. The correction consists in dividing the measured intensity, by the factor A hkl [15 ]:…”