100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Abboud, Frank E.; Baik, Ki‐Ho; Chakarian, Varoujan; Cole, Damon M.; Daniel, J. Ajay; Dean, Robert L.; Gesley, Mark; Naber, Robert J.; Newman, Thomas H.; Raymond, Frederick; Trost, David; Wiltse, Mark; DeVore, William

doi:10.1117/12.491928

Cited by 7 publications

(1 citation statement)

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“…This has been driven primarily by the continuing reduction in feature size accompanying the progress of the semiconductor industry ( Figure 1). The concomitant demands on mask fabrication have become rigorous, particularly with the introduction of sub-resolution elements for optical proximity effect correction [1]. In addition, as optical lithography becomes more difficult and costly, there is a strong possibility that electron-beam systems will be used directly [2,3] for the mass production of integrated circuits (IC's).…”

Section: Introductionmentioning

confidence: 99%

Resist Requirements and Limitations for Nanoscale Electron-Beam Patterning

2002

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Electron beam lithography still represents the most effective way to pattern materials at the nanoscale, especially in the case of structures, which are not indefinitely repeating a simple motif. The success of e-beam lithography depends on the availability of suitable resists. There is a substantial variety of resist materials, from PMMA to calixarenes, to choose from to achieve high resolution in electron-beam lithography. However, these materials suffer from the limitation of poor sensitivity and poor contrast.In both direct-write and projection e-beam systems the maximum beam current for a given resolution is limited by space-charge effects. In order to make the most efficient use of the available current, the resist must be as sensitive as possible. This leads, naturally, to the use of chemically amplified (CA) systems. Unfortunately, in the quest for ever smaller feature sizes and higher throughputs, even chemically amplified materials are limited: ultimately, sensitivity and resolution are not independent. Current resists already operate in the regime of < 1 electron/nm 2 . In this situation detailed models are the only way to understand material performance and limits.Resist requirements, including sensitivity, etch selectivity, environmental stability, outgassing, and line-edge roughness as they pertain to, high-voltage (100 kV) direct write and projection electron-beam exposure systems are described. Experimental results obtained on CA resists in the SCALPEL ® exposure system are presented and the fundamental sensitivity limits of CA and conventional materials in terms of shot-noise and resolution limits in terms of electron-beam solid interactions are discussed.

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Section: Introductionmentioning

confidence: 99%

Resist Requirements and Limitations for Nanoscale Electron-Beam Patterning

2002

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Mask process proximity correction for next-generation mask fabrication

Kim

Choi

Sohn

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTemperature dependent effective process blur and its impact on exposure latitude and lithographic targets using e-beam simulation and proximity effect correction J. Vac. Sci. Technol. B 32, 06F503 (2014); 10.1116/1.4896600Customized illumination for process window optimization and yield improvement in mask aligner lithography systems J. Vac. Sci. Technol. B 28, C6Q6 (2010); 10.1116/1.3518920Approach to full-chip simulation and correction of stencil mask distortion for proximity electron lithography Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.As the requirements for minimum resolution on masks continue to tighten, performing proximity correction for mask making will be even more necessary. Mask process correction MPC with a two-Gauss kernel can be used in order to analyze and correct mask process proximity effects. From measured critical dimension ͑CD͒ linearity and two-Gauss model, the process kernel parameters ␣ ͑range of spot size͒, ␤ ͑range of dry-etching and development process͒ and Ј ͑contribution ratio of ␤ over ␣͒ were extracted, and MPC was performed on the layout of linearity patterns by applying biases to the edge elements of the design. The CD linearity was dramatically improved even for small pattern sizes; the CD values of isolated spaces, lines and spaces, contacts, and isolated lines varied only by 10 nm for 1 m down to 100 nm feature size pattern. The MPC concept demonstrated in this article has the potential to push the mask-making resolution limit to an even smaller size than 100 nm patterns without any deterioration in CD linearity.

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