100‐MHz CMOS circuits directly fabricated on plastic using sequential laterally solidified silicon

Abstract

Abstract— CMOS TFT circuits were fabricated on plastic using sequential laterally solidified silicon combined with a low‐temperature CMOS process. The unity‐gain frequencies of the best of NMOS TFTs are greater than 250 MHz, and the CMOS ring oscillators operate at 100 MHz. To the best of the authors' knowledge, these are the highest‐frequency circuits ever fabricated directly on plastic. This high‐performance CMOS‐on‐plastic process can be applied to the fabrication of AMLCD integrated drivers and AMOLED pixels on plastic substrates.

Laser–Material Interactions for Flexible Applications

“…In addition, various applications of laser–material interaction and processing for inorganic‐based flexible devices, including energy devices, electronics, optoelectronics, and nanomaterial synthesis will be discussed. Note that the area of LTPS for flexible applications should be emphasized considering the field of laser–material interactions due to the impact of commercialization for active matrix flat‐panel displays. However, we are not going to discuss this area of study since it has been matured for a long time and covered by a number of articles.…”

Fast Flexible Plastic Substrate ZnO Circuits

“…Organic TFT ring oscillators fabricated on a polyester substrate with 0.68-μs/stage propagation delay have been reported [5]. Source-drain implant self-aligned CMOS ring oscillators on a polyimide substrate using sequential laterally solidified silicon had a propagation delay of nearly 1 ns/stage [6]. There have been several reports of oxide TFTs on flexible substrates using either stainless steel foils or plastic substrates [7]- [9].…”