100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS

Li, J.C.; Elliott, K.; Matthews, D.S.; Hitko, D.A.; Zehnder, Daniel; Royter, Y.; Patterson, P.R.; Hussain, T.; Jensen, J.F.

doi:10.1109/jssc.2009.2026819

Cited by 9 publications

(4 citation statements)

References 6 publications

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“…(10) indicates that the bipolar detector responsivity increases with the device bias current. Figure 4 shows a detector schematic designed in an InP HBT technology, supported by HRL Laboratories [22]. The InP device peak f T is about 350 GHz when the collector bias current is about 6mA and the f T drops to about 70 GHz with 100 µA collector bias current [22].…”

Section: B Bipolar Power Detectormentioning

confidence: 99%

“…Figure 4 shows a detector schematic designed in an InP HBT technology, supported by HRL Laboratories [22]. The InP device peak f T is about 350 GHz when the collector bias current is about 6mA and the f T drops to about 70 GHz with 100 µA collector bias current [22]. This technology supports both InP and Silicon BiCMOS devices by intimately integrating InP HBT devices together with deep scaled CMOS devices.…”

Section: B Bipolar Power Detectormentioning

confidence: 99%

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Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

Tang

2016

Solid-State Electronics

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This paper analyzes and compares three different types of detectors, including CMOS power detectors, bipolar power detectors, and super-regenerative detectors, deployed in the literature for integrated microwave/mm-wave imaging systems in mainstream silicon technologies. Each detector has unique working mechanism and demonstrates different behavior with respects to bias conditions, input signal power, as well as bandwidth responses. Two Figure-of-Merits for both wideband and narrowband imaging have been defined to quantify the detector performance comparison. CMOS and Bipolar detectors are good for passive imaging, while super regenerative detectors are superior for active imaging. The analytical results have been verified by both simulation and measurement results. These analyses intend to provide design insights and guidance for integrated microwave/mm-wave imaging power detectors.

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Section: B Bipolar Power Detectormentioning

confidence: 99%

Section: B Bipolar Power Detectormentioning

confidence: 99%

Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

Tang

2016

Solid-State Electronics

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“…Once bonded, the temporary handle wafer is removed and subsequent InP DHBT and heterogeneous interconnect processing starts. Additional details concerning fabrication and processing can be found in [8,9].…”

Section: Inp/si Bicmos Integrationmentioning

confidence: 99%

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

McCue¹,

Casto²,

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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In this paper, a double-balanced Gilbert cell down-conversion mixer is demonstrated from 70-110 GHz. The wide bandwidth and high frequency are enabled by the HRL InP/Si BiCMOS process. With an f T of 300 GHz, the available 0.25 µm InP HBTs are used in the signal path while the 90nm CMOS devices are used for biasing and gain adjustment. The fully differential circuit is implemented using two on-chip Marchand baluns feeding both the LO and RF ports. An IF buffer follows the mixer to improve matching and signal quality for testing. After de-embedding the balun and IF buffer, the mixer core achieves a peak conversion gain of 13 dB, a minimum DSB NF of 10 dB, and an OP1dB of -2 dBm while consuming 5 mA from a 3.3 V supply.Index Terms -W-Band circuits, mm-wave mixer, doublebalanced mixer, Marchand balun, heterogeneous integration.

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“…It would be advantageous to combine the merits of both compound semiconductors and silicon based CMOS/BiCMOS in order to enable a new class of high performance ICs (5) while allowing the rapid adoption of more advanced CMOS and compound semiconductor technology generations. This work will review HRL's efforts in wafer scale integration of an advanced 250nm, 350GHz fT/fMAX InP DHBT technology (6) with RF-CMOS technologies whose device proximity; heterogeneous interconnect density; and additional technology features both leverage and provide additional value to conventional silicon technologies (7),( 8),( 9), (10), (11), (12).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Heterogeneous Integration of InP HBTs on CMOS: Leveraging and Providing Value to Conventional Silicon Technologies

Royter

Patterson

et al. 2013

ECS Trans.

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Historically, compound semiconductors have enjoyed the benefit of material properties that lend themselves to high performance electron devices, but the ability to fabricate complex, high transistor count ICs is limited by the relative immaturity of the material system and small commercial market. Silicon based devices have made significant advances in device performance, but have not yet matched compound semiconductor device performance. However, a large commercial market has allowed the silicon system to mature and produce billion transistor count ICs in high volume. It would be advantageous to combine the merits of both compound semiconductors and silicon based CMOS/BiCMOS to enable a new class of high performance ICs. This work will review HRL's efforts in wafer scale integration of an advanced 250nm, 350GHz fT/fMAX InP DHBT technology with RF-CMOS technologies whose device proximity; heterogeneous interconnect density; and additional technology features both leverage and provide additional value to conventional silicon technologies.

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100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS

Cited by 9 publications

References 6 publications

Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

An Active Double-Balanced Down-Conversion Mixer in InP/Si BICMOS Operating from 70-110 GHz

(Invited) Heterogeneous Integration of InP HBTs on CMOS: Leveraging and Providing Value to Conventional Silicon Technologies

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