100  GHz bandwidth, 1 volt integrated electro-optic Mach–Zehnder modulator at near-IR wavelengths

Valdez, Forrest; Mere, Viphretuo; Mookherjea, Shayan

doi:10.1364/optica.484549

Cited by 29 publications

(3 citation statements)

References 64 publications

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“…First, modulation e ciency V π •L is proportional to λ. Advanced chip-scale modulators in the visible band have been demonstrated to achieve a smaller V π •L 37,38 . Second, compared with commercial bulk LN modulators, TFLN modulators with a smaller electrode gap can be obtained owing to the high con nement of the optical mode eld, effectively improving the modulation e ciency.…”

Section: Resultsmentioning

confidence: 99%

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Zhang,

Shen,

Zhang

et al. 2023

Preprint

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High-speed electro-optic modulators are key components in modern communication networks and various applications that require chip-scale modulation with large bandwidth, high modulation efficiency, and compact footprint. However, fundamental trade-offs make it challenging to achieve these metrics simultaneously, and thus new methodologies must be explored. To this end, we present the first demonstration of a Mach-Zehnder modulator harnessing topological slow-light waveguides and capacitively loaded slow-wave electrodes on silicon-nitride-loaded lithium niobate on an insulator platform. Owing to the slow-light effect in the one-dimensional topological waveguide, the increased light-matter interaction time and group index significantly improve the modulation efficiency. With the 1-mm-length modulation section, a record low half-wave voltage length product Vπ∙L of 0.21 V∙cm is obtained, which is one order of magnitude smaller than that of conventional thin film lithium niobate Mach-Zehnder modulators. Slow-wave electrodes are employed for electro-optic velocity and impedance matching, enabling an unprecedented bandwidth of 110 GHz without roll-off. The achieved bandwidth-efficiency ratio of 524 GHz/V/cm is among the highest reported for all-dielectric and semiconductor modulators. Four- and eight-level pulse amplitude modulation signals of up to 240 and 300 Gbps, respectively, have been generated using the topological modulator. Our topological modulator provides ultra-large bandwidth, ultra-high efficiency, and a compact solution for next-generation electro-optic systems.

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Section: Resultsmentioning

confidence: 99%

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Zhang,

Shen,

Zhang

et al. 2023

Preprint

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“…1(b). Since the power handling capability is essential at the Tx, waveguides are assumed to be implemented in a high-quality silicon nitride layer (SiN), that can carry much more power than silicon [36], and modulators to be implemented as LNOI on SiN [7]. At the Rx, SiN waveguides can also be utilized for the initial splitter network before light is transferred to silicon-based waveguides [37] and to germanium waveguide photodetectors [38].…”

Section: Equalization Conceptmentioning

confidence: 99%

“…Thin film lithium niobate on insulator (LNOI) stands out, with devices featuring low optical losses, very high bandwidths in excess of 100 GHz, reduced drive voltages, and high optical power handling capability [6]. Progress has also been made in the heterogeneous integration of such modulators into the silicon photonics platform [7]. Some more recently explored material systems such as barium titanate (BTO) even offer the prospect of being integrated at the level of 200 mm wafers [8].…”

Section: Introductionmentioning

confidence: 99%

Chip-to-chip orthogonal delay-division multiplexed network with optically enabled equalization

Zazzi,

Witzens

2024

J. Lightwave Technol.

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We propose and model an optical communication scheme for short distance datacom links based on the distribution of information across a wide comb spectrum. This modulation format, orthogonal delay division multiplexing, allows the multiplexing of data streams from multiple modulators, as well as the deserialization and equalization of the data in the optical domain. A concrete communication system, that allows the transport of 400 Gb/s across a single CWDM channel with a single 80 GHz cutoff lithium niobate on insulator modulator, is modeled under consideration of all noise sources present in the system and its sensitivity to group velocity dispersion and manufacturing variations is analyzed. Data is deserialized and equalized at the receiver with a 5-tap optical equalizer. This communication architecture may provide a path forward to implement high-baudrate signaling in short-reach optical links without requiring highspeed ADCs and electronic deserializers at the receiver, thus maintaining the in-package power consumption at manageable levels.

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Integration Of Solution‐Processed BaTiO₃ Thin Films with High Pockels Coefficient on Photonic Platforms

Picavet,

Lievens,

De Geest

et al. 2024

Adv Funct Materials

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The heterogeneous integration of ferroelectric BaTiO3 thin films on silicon (Si) and silicon nitride (SiN)‐based platforms for photonic integrated circuits (PICs) plays a crucial role in the development of future nanophotonic thin film modulators. Since the electro‐optic (EO) properties of ferroelectric thin films strongly depend on their crystal phase and texture, the integration of BaTiO3 thin films on these platforms is far from trivial. So far, a conventional integration route using a SrTiO3 template film in combination with high vacuum deposition methods has been developed, but it has a low throughput, is expensive and requires monocrystalline substrates. To close this gap, a cost‐efficient, high‐throughput and scalable method for integrating highly textured BaTiO3 films is needed. Therefore, an alternative method for the integration of highly textured BaTiO3 films using a La2O2CO3 template film in combination with a chemical solution deposition (CSD) process is presented. In this work, the structural and EO properties of the solution‐processed BaTiO3 film are characterized and its integration into an optical ring resonator is evaluated. The BaTiO3 film exhibits a fiber texture, has a large Pockels coefficient (reff) of 139 pm V−1, and integration into a ring resonator‐based modulator shows a VπL of 1.881 V cm and a bandwidth of > 40 GHz. This enables low‐cost, high‐throughput, and flexible integration of BaTiO3 films on PIC platforms and the potential large‐scale fabrication of nanophotonic BaTiO3 thin‐film modulators.

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100 GHz bandwidth, 1 volt integrated electro-optic Mach–Zehnder modulator at near-IR wavelengths

Cited by 29 publications

References 64 publications

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Chip-to-chip orthogonal delay-division multiplexed network with optically enabled equalization

Integration Of Solution‐Processed BaTiO₃ Thin Films with High Pockels Coefficient on Photonic Platforms

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100 GHz bandwidth, 1 volt integrated electro-optic Mach–Zehnder modulator at near-IR wavelengths

Cited by 29 publications

References 64 publications

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Unlocking wide-bandwidth and high-efficiency: topological slow-light structure for electro-optic modulation

Chip-to-chip orthogonal delay-division multiplexed network with optically enabled equalization

Integration Of Solution‐Processed BaTiO3 Thin Films with High Pockels Coefficient on Photonic Platforms

Contact Info

Product

Resources

About

Integration Of Solution‐Processed BaTiO₃ Thin Films with High Pockels Coefficient on Photonic Platforms