100 GBd Intensity Modulation and Direct Detection With an InP-Based Monolithic DFB Laser Mach–Zehnder Modulator

Lange, S.; Wolf, S.; Lutz, Joachim; Altenhain, Lars; Schmid, Rolf; Kaiser, R.; Schell, Martin; Koos, C.; Randel, Sebastian

doi:10.1109/jlt.2017.2743211

Cited by 81 publications

(17 citation statements)

References 12 publications

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“…37 High-index-contrast silicon photonics (SiPh) provides dense integration of complex photonic functionalities, such as highspeed modulators, using technology and process toolsets from CMOS electronics. 39 Other photonic integrated circuit (PIC) platforms such as indium phosphide, [40][41][42] which typically relies on 100 mm wafers, and lithium niobate (LiNbO 3 ), 43 which commonly relies on 150 mm wafers, are fabricated in customized fabs. SiPh integrated circuits are typically fabricated on 200 or 300 mm wafers.…”

Section: Introductionmentioning

confidence: 99%

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

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Section: Introductionmentioning

confidence: 99%

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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“…Eight optical lanes-based 400 GbE solutions are already being deployed [8,9]. Solutions based on eight optical lanes [10][11][12][13][14][15], or even four optical lanes [16][17][18][19][20][21][22][23][24][25][26][27], for 800 GbE are more appealing thanks to the use of using high bandwidth components. This allows reducing of costs, power consumption, and complexity of parallelism.…”

Section: Introductionmentioning

confidence: 99%

“…We foresee that the industrial solution for codesigned and cointegrated electronics and photonics is around the corner. The required ultrahigh bandwidth building blocks are available: integrated circuits for generating PAM4 [43,44] even without equalization [45]; modulators and photodetectors (PD) [17,39,46]; and analogue to digital converter (ADC) frontend for receivers [47]. We also need to mention that electronic instruments, such as arbitrary waveform generators (AWG) and digital storage oscilloscopes (DSO), have reached sampling rates beyond 200 GSa/s with plenty of bandwidth for 100 Gbaud signals.…”

Section: Introductionmentioning

confidence: 99%

100 Gbaud On–Off Keying/Pulse Amplitude Modulation Links in C-Band for Short-Reach Optical Interconnects

et al. 2021

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We experimentally evaluate the high-speed on–off keying (OOK) and four-level pulse amplitude modulation (PAM4) transmitter’s performance in C-band for short-reach optical interconnects. We demonstrate up to 100 Gbaud OOK and PAM4 transmission over a 400 m standard single-mode fiber with a monolithically integrated externally modulated laser (EML) having 100 GHz 3 dB bandwidth with 2 dB ripple. We evaluate its capabilities to enable 800 GbE client-side links based on eight, and even four, optical lanes for optical interconnect applications. We study the equalizer’s complexity when increasing the baud rate of PAM4 signals. Furthermore, we extend our work with numerical simulations showing the required received optical power (ROP) for a certain bit error rate (BER) for the different combinations of the effective number of bits (ENOB) and extinction ratio (ER) at the transmitter. We also show a possibility to achieve around 1 km dispersion uncompensated transmission with a simple decision feedback equalizer (DFE) for a 100 Gbaud OOK, PAM4, and eight-level PAM (PAM8) link having the received power penalty of around 1 dB.

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“…The datacenter I/O port transmission speed is soon approaching 200-Gbps per lambda [3]. To meet such a high data rate, the intensity modulation direct detection (IM/DD) systems with advanced modulation formats such as pulse amplitude modulation (PAM) or discrete multi-tone (DMT) have been experimentally demonstrated [4][5][6][7][8]13]. However, such an IM/DD system imposes stringent requirements on optoelectronic devices, bringing a significant challenge to cost-sensitive datacenters.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Volterra filtering [12,13] and machine learning (ML) algorithms [14,15] have been introduced as numerical methods for channel equalization against the nonlinear impairments in 200-Gbps and beyond optical short-reach communication systems [4][5][6][7][8]13]. Compared with the linear signal processing methods employed only in one-dimensional scalar signal space, such as feed forward equalization, these methods handle the signal recovery in a complete and sequential high-dimensional space, known as a Hilbert space (HS).…”

Section: Introductionmentioning

confidence: 99%

Kernel mapping for mitigating nonlinear impairments in optical short-reach communications

Westergren¹,

Pang²,

Udaļcovs³

et al. 2019

Opt. Express

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Nonlinear impairments induced by the opto-electronic components are one of the fundamental performance-limiting factors in high-speed optical short-reach communications, significantly hindering capacity improvement. This paper proposes to employ a kernel mapping function to map the signals in a Hilbert space to its inner product in a reproducing kernel Hilbert space, which has been successfully demonstrated to mitigate nonlinear impairments in optical short-reach communication systems. The operation principle is derived. An intensity modulation/direct detection system with 1.5-µm vertical cavity surface emitting laser and 10-km 7core fiber achieving 540.68-Gbps (net-rate 505.31-Gbps) has been carried out. The experimental results reveal that the kernel mapping based schemes are able to realize comparable transmission performance as the Volterra filtering scheme even with a high order.

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100 GBd Intensity Modulation and Direct Detection With an InP-Based Monolithic DFB Laser Mach–Zehnder Modulator

Cited by 81 publications

References 12 publications

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

100 Gbaud On–Off Keying/Pulse Amplitude Modulation Links in C-Band for Short-Reach Optical Interconnects

Kernel mapping for mitigating nonlinear impairments in optical short-reach communications

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