Characterization of SiC thin films deposited by HiPIMS

Leal, Gabriela; Campos, Tiago Moreira Bastos; Sobrinho, Argemiro Soares da Silva; Pessoa, Rodrigo Sávio; Maciel, Homero Santiago; Massi, M.

doi:10.1590/s1516-14392014005000038

Cited by 15 publications

(7 citation statements)

References 22 publications

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“…In the literature, there is only one report of SiC growth on a Si substrate using HiPIMS [ 30 ]. However, due to the large lattice mismatch between SiC and Si (~20%), the grown film exhibited amorphous characteristics and a high residual stress [ 28 , 30 ]. To reduce these effects, several studies have demonstrated that using a sacrificial layer (buffer layer) on the Si substrate before the deposition of SiC is an effective alternative.…”

Section: Resultsmentioning

confidence: 99%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão

Vasconcelos²,

Pessoa

et al. 2018

Materials

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This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.

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Section: Resultsmentioning

confidence: 99%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão

Vasconcelos²,

Pessoa

et al. 2018

Materials

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show abstract

“…SiC thin films were grown onto polished p-type Si (100) wafers, covered or not with an AlN buffer, via HiPIMS in a high-vacuum chamber with a background pressure of 6×10 -6 Torr. More details about the HiPIMS reactor can be found elsewhere [31,32]. The working pressure of the argon gas (99.999%) was maintained at 3 mTorr for a corresponding flow rate of 20 sccm.…”

Section: Deposition Methodsmentioning

confidence: 99%

“…They observed that the Ti-Si-C film quality can be improved by HiPIMS technique [30]. Pusch [31], however, only amorphous films were obtained.…”

Section: Introductionmentioning

confidence: 99%

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

Galvão¹,

Guerino²,

Campos³

et al. 2019

Preprint

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of a thin aluminum nitride (AlN) buffer layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, the SiC films were also grown on Si substrates. Comparisons of the structural and chemical properties of SiC thin films grown on the two types of substrates allowed us to evaluate the influence of AlN buffer layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of HiPIMS technique to produce polycrystalline SiC thin films at near room temperature only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with a good structural quality using AlN buffer layer.

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“…In the literature, there is only one report about the SiC growth on Si substrate using the HiPIMS technique [23]. However, due to the large mismatch between SiC and Si (~ 20%), the grown film exhibited an amorphous characteristic and a high residual stress [23,24]. To reduce these effects, several studies have demonstrated that using a sacrificial layer (buffer layer) on Si substrate before the deposition of SiC is an effective alternative.…”

Section: Sic Thin Film Structurementioning

confidence: 99%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão¹,

Vasconcelos²,

Pessoa³

et al. 2018

Preprint

View full text Add to dashboard Cite

This article reports a novel and efficient method to synthesize graphene by thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. A CO2 laser beam heating without vacuum or controlled atmosphere was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in form of small islands with quality, density and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibits a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafer, which indicates its potential for electronic device applications.

show abstract

Characterization of SiC thin films deposited by HiPIMS

Cited by 15 publications

References 22 publications

A Novel Method of Synthesizing Graphene for Electronic Device Applications

A Novel Method of Synthesizing Graphene for Electronic Device Applications

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

A Novel Method of Synthesizing Graphene for Electronic Device Applications

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