Preparation of nanodimensional CdS by chemical dipping technique and their characterization

Patra, Sankar Narayan; Mitra, Partha; Pradhan, S.K.

doi:10.1590/s1516-14392011005000015

Cited by 31 publications

(10 citation statements)

References 13 publications

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“…In accord with this, we have shown the simulated XRD and SAED in figure 11 and figure 12 respectively. A close examination of the XRD spectra before cutting shows distinct peaks at 27.775°, 46.225° and 54.775° corresponding to the standard XRD peaks in crystalline silicon known from silicon nanopowder experimental data [49]. During cutting, several scattered peaks were observed to appear which are emotive of the presence of amorphous silicon.…”

Section: Structural Transformations and Mechanism Of Ductility In Silmentioning

confidence: 73%

Influence of microstructure on the cutting behaviour of silicon

et al. 2016

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General rights Copyright for the publications made accessible via the Queen's University Belfast Research Portal is retained by the author(s) and / or other copyright owners and it is a condition of accessing these publications that users recognise and abide by the legal requirements associated with these rights. Abstract:We use molecular dynamics simulation to study the mechanisms of plasticity during cutting of monocrystalline and polycrystalline silicon. Three scenarios are considered: (i) cutting a single crystal silicon workpiece with a single crystal diamond tool, (ii) cutting a polysilicon workpiece with a single crystal diamond tool, and (iii) cutting a single crystal silicon workpiece with a polycrystalline diamond tool. A long-range analytical bond order potential is used in the simulations, providing a more accurate picture of the atomic-scale mechanisms of brittle fracture, ductile plasticity, and structural changes in silicon. The MD simulation results show a unique phenomenon of brittle cracking typically inclined at an angle of 45° to 55° to the cut surface, leading to the formation of periodic arrays of nanogrooves in monocrystalline silicon, which is a new insight into previously published results. Furthermore, during cutting, silicon is found to undergo solid-state directional amorphisation without prior Si-I to Si-II (beta tin) transformation, which is in direct contrast to many previously published MD studies on this topic. Our simulations also predict that the propensity for amorphisation is significantly higher in single crystal silicon than in polysilicon, signifying that grain boundaries eases the material removal process.

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Section: Structural Transformations and Mechanism Of Ductility In Silmentioning

confidence: 73%

Influence of microstructure on the cutting behaviour of silicon

et al. 2016

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“…The Williamson-Hall method is one of the simplest methods which clearly differentiates between size-induced and strain-induced peak broadening by considering the peak width as a function of 2θ(hkl). These estimated values of microstrain indicate a decreasing trend with increases crystallite size with diffraction angle in X-ray diffraction line broadening profile [29] as shown in Fig. 4(b).…”

Section: Fig 3 Variation Of Dislocation Density Against Crystallitementioning

confidence: 64%

Large scale synthesis and characterization of cadmium sulfide nanoparticles by simple chemical route

Garde¹

2020

Nanosystems: Phys. Chem. Math.

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Large scale cadmium sulfide nanoparticles were synthesized by simple chemical route. The microstructure of cadmium sulfide nanoparticles was characterized by X-ray diffraction pattern (XRD) FESEM, FTIR and UV-visible spectroscopy. The XRD results showed that there was a transformation from cubic to hexagonal crystalline phase. The W-H plots show the size and nature of the strain incorporated in peak broadening of X-ray diffraction peaks. Some of the observed peak broadening can be attributed to crystallite size and microstrain effects, dislocation density, hkldependent peak broadening and peak shifts are clearly associated with stacking faults. The refractive index of the CdS nanoparticles was estimated to 2.22. The optical band gap of the synthesized CdS nanoparticles was calculated by Tauc relation and found to be 3.45 eV. The dependence of the blue shift and optical band gap on the quantum size effect was confirmed by UV-Visible spectroscopy. FTIR study confirmedthat the-CO and-OH groups of thioglycerol can readily bind with CdS nanoparticles.

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“…Diffraction data from standard silicon (Si) powder was used to measure the instrumental broadening [17]. The particle size is very high in the standard and the broadening in this case is due to instrument only.…”

Section: Methodsmentioning

confidence: 99%

Synthesis of Nanocrystalline CdS by SILAR and Their Characterization

Chandra¹,

Mukherjee

Mitra

2014

Journal of Materials

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A simple and cost effective chemical technique has been utilized to prepare cadmium sulphide (CdS) nanoparticles at room temperature. The sample is characterized with XRD (X-ray diffractometer), SEM (scanning electron microscope), TEM (transmission electron microscope), FTIR (Fourier transform infrared), EDX (energy dispersive X-rays), and UV-VIS (ultraviolet visible) spectrophotometer. The particle size estimated using X-ray line broadening method is ∼21.5 nm. While particle size estimation, both instrumental and strain broadening was taken into account. The lattice strain was evaluated using WilliamsonHall equation. SEM illustrates formation of submicron size crystallites and TEM image gives a particle size of ∼23.5 nm. The characteristic stretching vibration frequency of CdS was observed in the absorption band in FTIR spectrum. Optical absorption study exhibits a band gap energy value of about 2.44 eV.

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Preparation of nanodimensional CdS by chemical dipping technique and their characterization

Cited by 31 publications

References 13 publications

Influence of microstructure on the cutting behaviour of silicon

Influence of microstructure on the cutting behaviour of silicon

Large scale synthesis and characterization of cadmium sulfide nanoparticles by simple chemical route

Synthesis of Nanocrystalline CdS by SILAR and Their Characterization

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