Nonohmic behavior of SnO2.MnO2-based ceramics

Abstract

The present paper describes the nonohmic behavior of the SnO2.MnO-based system and analyzes the influence of the sintering time and the Nb2O5 concentration on this system's electrical properties. A nonlinear coefficient of ~7 was obtained for a 0.2 mol%-doped Nb2O5 composition, which is comparable to other values reported in the literature for the ternary SnO2-based systems. A recent barrier formation model proposed in the literature to explain the nonlinear electrical behavior of SnO2-based systems is used to clarify the role of the MnO constituent in the formation of the barrier, taking into account the influence of segregated atoms, precipitated phase and oxygen species in the grain boundary region

Multiscale Heterogeneous Modeling with Surfacelets

“…The results are surfacelet coefficients for a particular angle. From scanning electron microscope (SEM) images of SiO2-MnO2 based ceramics [33] shown in Fig. 10-(a), the material model can be reconstructed based on the surfacelet transform.…”

Potential Barrier of (Zn,Nb)SnO2‐Films Induced by Microwave Thermal Diffusion of Cr3+ for Low‐Voltage Varistor

“…The negative interface is formed during the sintering process and is composed of the acceptors donors (, , , O′, O′) with density surface states ( N S ) at the interfaces of the grain boundaries. These defects are responsible for the formation of a double barrier for the electrical transport between the grains of SnO 2 in the grain‐boundary region …”

“…These defects are responsible for the formation of a double barrier for the electrical transport between the grains of SnO 2 in the grain-boundary region. [12][13][14] As noted in the literature, 11,[15][16][17] , the increase in the electrical properties is dependent of addition of chromium in the systems. The nonlinear coefficient (a) has a significant improvement and this is related to increase in potential barrier height, since it provides greater blocking the transport of electric current.…”