2003
DOI: 10.1590/s1516-14392003000100011
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Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

Abstract: Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V) with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (BC = 6000 ppm). The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and h… Show more

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Cited by 12 publications
(15 citation statements)
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“…Therefore, in the case of the TiO 2 /BDD system, an increase in the measured current obviously results from the presence of titania nanotubes that served as a substrate for BDD growth; the extended BDD surface has contact with an electrolyte as has been observed for other porous substrates. 55,56 A clear difference between the TiO 2 /BDD layers obtained at various [B]/[C] ratios in the gas phase was also observed. According to previous studies in which the electrical and electrochemical properties of BDD layers with different [B]/[C] ratios were studied 57,58 an increase in boron concentration resulted in the higher conductivity of samples, and therefore in the enhanced capacitance current.…”
Section: Investigation Of Electrode Structure By Raman Spectroscopymentioning
confidence: 84%
“…Therefore, in the case of the TiO 2 /BDD system, an increase in the measured current obviously results from the presence of titania nanotubes that served as a substrate for BDD growth; the extended BDD surface has contact with an electrolyte as has been observed for other porous substrates. 55,56 A clear difference between the TiO 2 /BDD layers obtained at various [B]/[C] ratios in the gas phase was also observed. According to previous studies in which the electrical and electrochemical properties of BDD layers with different [B]/[C] ratios were studied 57,58 an increase in boron concentration resulted in the higher conductivity of samples, and therefore in the enhanced capacitance current.…”
Section: Investigation Of Electrode Structure By Raman Spectroscopymentioning
confidence: 84%
“…Films grown at lower temperatures contain hydrogen and graphite impurities. Furthermore, considerable thermal expansion mismatch between diamond and most substrate materials leads to poor adhesion. …”
Section: Introductionmentioning
confidence: 99%
“…28 The sharp peak at 1335 cm À1 is also observed for boron doped diamond powder. 29,30 Therefore it can be concluded that the sharp peak corresponds to the transversal mode of diamond relating to sp 3 bond. 31 Shroder et al 32 also studied Raman analysis of composite structure in diamond thin lms and found that upon increase of diamond concentration (1.5-60%) in diamond-graphite composite, resulted in high intensity peak of diamond while the graphitic peak practically disappeared at 50% diamond concentration.…”
Section: Raman Spectroscopymentioning
confidence: 95%