Mobility in n-doped wurtzite III-Nitrides

Abstract

A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, piezoelectric, interactions with the phonons, and with impurities. The case of n-InN, n-GaN, and n-AlN have been analyzed: as expected the main contribution comes from the polar-optic interactions in these strongly polar semiconductors. The other interactions are in decreasing order, the deformation acoustic, the piezoelectric, and the one due to impurities

Higher‐order generalized hydrodynamics of carriers and phonons in semiconductors in the presence of electric fields: Macro to nano

“…Eq. (5)]; it may be noticed that in polar semiconductors Fröhlich‐polar interaction ( lo , Fröhlich interaction) is by far the relevant one producing rates of change orders of magnitude greater than those associated to the other interactions . Moreover, we have neglected the contribution of the plasma states via Coulomb interaction.…”

A Raman scattering-based method to probe the carrier drift velocity in semiconductors: Application to gallium nitride

“…We concentrate the attention on the steady state in this case of n-doped polar semiconductor, and we consider zincblende GaN in the numerical calculations. The values of the average internal energy, U͑E͒ = ͑3/2͒k B T c * ͑E͒ + ͑1/2͒m e v e 2 ͑E͒, and v e ͑E͒ versus the electric field strength were obtained for a concentration n =10 17 cm −3 and lattice temperature T 0 = 300 K by solving numerically the coupled set of evolution equations for the nonequilibrium thermodynamic state of the system, as shown elsewhere, 12 and Chap. 6…”

“…[12][13][14] The calculations have been restricted to field intensities below 100 kV/ cm, when we can resort to using the effective mass approximation (parabolic bands) around the ⌫ point in this direct inverted-band semiconductors; for larger fields it would be necessary to include the influence of side valleys. Figure 1 presents the calculated spectra considering zinc-blende GaN with n =10 17 cm 3 , and in the presence of a field strength E = 50 kV/ cm, using Q = 1.8ϫ 10 5 cm −1 , and for angles =0, = / 4, and = / 2, while we have that v e = 1.83ϫ 10 7 cm/ s and T c * = 511 K. 12 The plasma frequency is pl ϳ 1.2ϫ 10 13 s −1 . In Table I are presented the differences in frequency for all three pairs of angles as obtained from the position of the peaks in Fig.…”

Non-Linear electron mobility in n-doped III-Nitrides

“…In the case of these semiconductors (GaN, InN, and AlN) the main contribution comes from the polar-optic interaction in these strongly polar semiconductors [13].…”