Abstract:Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111) wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose was varied between 10(14) and 10(17) atoms cm-2. Rutherford backscattering (RBS) and channeling analysis was applied in order to explore the formation of a single crystalline Si-Ge compound layer, both prior and afte… Show more
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