Abstract:The results for the sintering of Bi 4 Ti 3 O 12 (BIT)-doped BaTi 0.85 Zr 0.15 O 3 (BTZ) thick films, deposited by electrophoresis, using as heating source a CO 2 laser are presented. The thermal process associated to the laser scanning sintering (LSS) acted in a similar way as a two-step-sintering process. This characteristic together with the high heating rate allowed us to obtain thick films with an average grain size of 200 nm, high relative density (~96%) and with a homogeneous microstructure. The X ray diffraction profile analysis show evidences for Bi 3+ replacing Ba 2+ at the A sites.