2004
DOI: 10.1590/s0366-69132004000300012
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Thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics

Abstract: In general, polycrystalline ceramics exhibit lower thermal conductivities than their associated single crystals. For instance, at 300K, the theoretical thermal conductivity of single crystal aluminum nitride (AlN) is 319 W/m-K, whereas, the values measured for polycrystalline AlN ceramics range from 17 W/m-K to 285 W/m-K. This variation is not unusual for polycrystalline ceramics. The variability is strongly dependent upon the purity of the starting materials and the details of sintering process. The process i… Show more

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Cited by 91 publications
(25 citation statements)
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(35 reference statements)
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“…G is the shear modulus (147 GPa), ν is Poisson's ratio (0.252), e in is the residual strain applied in the in‐plane direction, and h is the thickness of the film. The thermal variations of the film and substrate can be calculated as c te × Δ T × m ∙ a epi or n ∙ a sub , where c te is the thermal expansion coefficient (BeO = 5.99; GaN = 3.43; ZnO = 4.31 × 10 −6 °C −1 ) and Δ T is the thermal change between the process (250°C) and room temperature (25°C). Thermally induced strains were added to the BeO films.…”
Section: Resultsmentioning
confidence: 99%
“…G is the shear modulus (147 GPa), ν is Poisson's ratio (0.252), e in is the residual strain applied in the in‐plane direction, and h is the thickness of the film. The thermal variations of the film and substrate can be calculated as c te × Δ T × m ∙ a epi or n ∙ a sub , where c te is the thermal expansion coefficient (BeO = 5.99; GaN = 3.43; ZnO = 4.31 × 10 −6 °C −1 ) and Δ T is the thermal change between the process (250°C) and room temperature (25°C). Thermally induced strains were added to the BeO films.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the nozzle layer was modelled for the hot core stream only. For reduction of parasitic temperature drops a layer of AlN with a high thermal conductivity of 170 Wm −1 K −1 [35] is introduced to form an electrical insulation between the TE uni-couple and the metallic nozzle. When considering the dielectric strength of AlN of 20 kVmm −1 [36], a minimum thickness of 325 µ m is set for this layer on both sides with regard to weight optimization and concurrent electric insulation effect in the presence of high DC voltages generated by the entire TEG at the nozzle.…”
Section: Methodsmentioning
confidence: 99%
“…Thus, the nozzle layer was modelled only for the hot core stream. For reduction of parasitic temperature drops a layer of AlN with a high thermal conductivity of 170 Wm -1 K -1 [30] is introduced to form an electrical insulation between the TE double leg and the metallic nozzle. Considering the dielectric strength of AlN of 20 kVmm -1 [31], a minimum thickness of 325 µm is set for this layer on both sides with regard to weight optimization and concurrent electric insulation effect in presence of high DC voltages generated by the entire TEG at the nozzle.…”
Section: Methodsmentioning
confidence: 99%