Production and characterization of indium oxide and indium nitride

Abstract

Thin films of indium oxide 200 nm thick and indium nitride 150 nm thick were produced by reactive sputtering deposition onto soda lime substrates. The Indium cathode was kept under vacuum attached to a high voltage dc. The In x O y films were obtained in argon-oxygen mixture with total pressure between 2 and 7 Pa, current density between 0.04 and 0.56 mA/cm 2 and substrate temperature of 300 K. The In x N y films were obtained in argon-nitrogen mixture with total pressure between 1 and 5 Pa, current density between 0.18 and 14 mA/cm 2 and substrate temperature of 320 K. Results revealed that thin films give rise to high conductivity, are transparent and have a carrier density of 10 19 cm −3 for In x O y and 10 17 cm −3 for In x N y . These results were obtained mainly from temperature dependent α and σ measurements. The reduced chemical potential was calculated considering three different scattering mechanisms i.e. interaction with optically polarized phonons, interaction with ionized impurities and interaction with grains, in order to identify the main scattering mechanism, which resulted to be due to impurities.

Ventilation Fan Fires: Overheated Windings Lead to Failed Thermal Limit Switch

“…Furthermore, due to the electrical conductivity of both tin and indium oxide [17], it may be possible for a partially separated link to re-establish an electrical connection through oxide formation.…”

ITO Obtained by Spray Pyrolysis and Coating on Glass Substrate

“…In addition, the sol-gel process provides materials for application in several devices like photovoltaic cells, liquid crystal displays (LCD screens), image sensors, windscreen (smart window), touch screens, among others. 8 Indium oxide doped with tin (ITO) is a semiconducting material with wide band gap. ITO is transparent in the visible region of the electromagnetic spectrum and serves as a transparent conductive oxide (TCO).…”

The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

“…In 2 O 3 is a very important semiconductor since In 2 O 3 doped with Sn is widely used as transparent electrodes in electronic devices [22]. There is some theoretical [13] and experimental work about the thermoelectric properties of In 2 O 3 and its dopants [2,[5][6][7][8][9][10][11][12][13][14][15][16][17][18] . There is work [5][6][7][8][9][10] about In 2 O 3 bulk and its dopant.…”

“…M. Ohtaki et al studied the high temperature thermoelectric properties of In 2 O 3 -based mixed oxides and the applicability to power generation [7]. There is also some work about In 2 O 3 thin film and its dopant [2,[11][12][13][14][15][16][17][18]. For example, V. Brinzari [2], S.R.…”

“…M. Liess et al [14] used the thermoelectric properties of In 2 O 3 film to fabricate a sensor based on the junction of In 2 O 3 film and gold. L. C. Jimenez B et al [15] The thickness of the samples was measured by a surface profiler (Veeco Dektak 3ST) and the thicknesses of the samples deposited with an Ar flow rate of 0, 10 and 26.7 sccm were 150, 106 and 115 nm respectively. The crystal structure of the samples was studied with X-ray diffraction (XRD, D/max 2500 PC, maximum power 18 kW, Cu K α radiation).…”