Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Abstract

The calculation of the electronic energy levels of n-type δ-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10 13 cm −2

Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure

“…In this situation, the conduction band minimum is found at the X-point of the Brillouin zone. As it has been previously shown, for that pressure range the comparison between the DDQW energy level spectra calculated at the Γ-point and at the X-point yields that, for all the values of the impurity densities, the ground state of the n-type δ-doped QW is located precisely at the X-point [6]. If one assumes that the two-dimensional electron gas forms at that specific Brillouin zone position, it immediately follows that the electron system undergoes a transition to a heavier carrier situation.…”

“…This mechanism could also serve to achieve a high density of charge carriers [6]. The systems to consider are diverse: single and double δ-doped quantum wells, electronic devices with δ-doped channels, and so on.…”

High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

“…In this context there exist some previous works. For instance, some years ago the energy level structure of a single ‐doped quantum well was reported as a function of the hydrostatic pressure considering the –X crossover that occurs in GaAs when pressure goes beyond 13 kbar (). There are also studies of the effect of hydrostatic pressure on the excitonic spectrum of single ‐doped systems () and in the optical and transport properties for ‐doped structures .…”

Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure

“…There are some studies of this effect in single and multiple wells of different profiles (mainly square) as well as quantum dots and quantum wires [3,4,5]. Additionally, there are some works in isolated n-type δ -doped wells in which the effect of hydrostatic pressure is studied as well [6]. These studies conclude that by the effect of pressure is possible to modify the electronic structure of δ -doped quantum wells.…”