volume 36, issue 3b, P858-861 2006
DOI: 10.1590/s0103-97332006000600016
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Abstract: The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g ⊥ -factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the fra…

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