“…3,4,6 (ii) the electronic structure of the scattering region under a finite source-drain bias voltage is self-consistently determined by combining with first principle electronic structure calculation methods such as the density functional theory (DFT) and the Hartree-Fock (HF) method. 17,18,19,20,21,22,23,24,25,26,27 (iii) many body effects in the transport properties, e.g., electron-phonon 28,29,30,31,32,33 and electron-electron interactions, 34,35,36,37 might be included through selfenergies without largely deviating the theoretical framework. (iv) its applicability to large-scale systems can be anticipated, since the NEGF method relies practically on the locality of basis functions in real space, resulting in computations for sparse matrices.…”