Semiconductor characteristics of Nd doped PbO-Bi2O3-Ga2O3 films

Abstract

In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. This material has important electro-optic applications and offers possibilities for semiconductor applications in heavy metal oxide semiconductor technology. In this study thin films of PbO-Bi 2 O 3 -Ga 2 O 3 were deposited by reactive sputtering. Two targets with different concentrations of Nd 2 O 3 (0.2 and 1.0 wt%) were prepared. Thin films were deposited by pure Ar plasma, at 5 mTorr pressure and RF power of only 20 W. Films were deposited on three inch diameter substrates of (100) silicon wafers. Optical UV-Vis-Nir transmittance and FTIR analyses showed that the films are transparent in the visible and middle infrared region of the electromagnetic spectrum. The refractive index of the films was of about 2.3, as measured by ellipsometry; Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the compositional analysis of the films. For the electrical characterization it was used metallic electrodes, and the final structure obtained is a capacitor structure where the gallium oxide film plays the role of a dielectric. In the current versus voltage (IxV) analyses, the samples with 1.0 wt% of Nd 2 O 3 show semiconductor characteristics similar to the ones obtained for the degenerated transistors. The electric characteristics of these films allow applications with electro-optic devices (phototransistors and photo detectors).

Lead Oxides: Synthesis and Applications

“…PbO also is used as an X-ray imaging material in detectors [1] (Figure 4.4), as a solar [33], and as a material useful as an X-ray sensitive photoconductor [34]. In conjunction with other elements, PbO has important electro-optic applications [35].…”

High Quantum Efficiency of Nd3+ Ions in a Phosphate Glass System using the Judd–Ofelt Theory

“…These clusters cause quenching of luminescence due to energy transfer between neighboring ions [10,11]. Thus, researchers continue to develop new glass systems, with different spectroscopic parameters, for optical device applications [12][13][14][15].…”

Produção e caracterização elétrica de filmes finos de telureto com nanopartículas de ouro depositados pela técnica sputtering para aplicação em memórias.

“…Em comparação com as memórias flash (inorgânica), essas memórias orgânicas têm estrutura mais simples, baseadas em um capacitor de placas paralelas [25] ou MOS (Metal -Óxido -Semicondutor) [26], e o mecanismo de condução de cargas associado à gravação, desgravação e leitura da memória é diferente [27]. Com isto foi possível produzir e estudar diversas propriedades de filmes finos depositados por sputtering a partir de alvos vítreos de PbO-Bi2O3-Ga2O3 [35] e de GeO2-PbO [36,37,38].…”