Photoluminescence properties of Te doped AlGaAsSb alloys

Filho, D. O. Toginho; Dias, Ivan Frederico Lupiano; Duarte, J.L.; Laureto, Édson; Harmand, J.C.

doi:10.1590/s0103-97332005000600015

Cited by 11 publications

(4 citation statements)

References 36 publications

(68 reference statements)

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“…5d) in a log scale. The set of PL spectra in the linear scale shows an explicit " S" behavior for the dominant transition with increasing temperature similar to that observed for undoped and Te doped bulk samples of antimony family epilayers analyzed elsewhere [21]. The PL spectra presented indicate two transitions, one with lower energy peak transition more intense at higher temperatures.…”

Section: Resultssupporting

confidence: 74%

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

et al. 2006

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We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verifi ed by SIMS the presence of a macro fluctuation in the Te profi le concentrations in the growth direction of the doped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical and electrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option for VCSEL technology.

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Section: Resultssupporting

confidence: 74%

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

et al. 2006

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“…From Figure 2e, the formation energy of C is higher than Si, and the concentration of C B is estimated to be around 1.53 × 10 14 cm −3 , and of C As is around 6.36 × 10 10 cm −3 , with graphite as reference. In the literature, usually the concentration of DAP defects that induces photoluminescence falls into the range of 10 15 to 10 18 cm −3 , [ 43–45 ] higher than our simulated concentrations. However, with C defects in other initial form other than graphite, the formation energy will be lower, resulting in much higher concentration of C B and C As .…”

Section: Figurecontrasting

confidence: 46%

Pressure‐Dependent Behavior of Defect‐Modulated Band Structure in Boron Arsenide

et al. 2020

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The recent observation of unusually high thermal conductivity exceeding 1000 W m−1 K−1 in single‐crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single‐crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor–acceptor pair (DAP) recombination transitions. Based on first‐principles calculations and time‐of‐flight secondary‐ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High‐pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices.

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“…In this work, we have examined conventional C–S n-i-p junction GaAsSb NWs (Figure a) grown by self-assisted molecular beam epitaxy (MBE) with variation in the intrinsic “i”- region width and a simple Te compensation approach to improve the device performance, as undoped GaAsSb is slightly p-type, which is attributed to residual acceptor impurity, namely, Ga vacancy-related defects and Ga antisite defects (V Ga Ga Sb ). , To reduce the background carrier concentration, n-dopant pulsing in the form of a GaTe source was introduced during the growth of the i-GaAsSb shell. We demonstrate the fabrication and characterization of MBE-grown room-temperature (RT) conventional devices for the application of near-IR photodetectors at wavelengths approaching 1.1 μm with high rectification ratio, enhanced responsivity and detectivity, and low series resistance.…”

Section: Introductionmentioning

confidence: 99%

MBE-Grown Hybrid Axial Core–Shell n-i-p GaAsSb Heterojunction Ensemble Nanowire-Based Near-Infrared Photodetectors up to 1.5 μm

Ramaswamy

Dawkins

Kuchoor

et al. 2022

Crystal Growth & Design

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In this paper, high-performance self-assisted molecular beam epitaxy (MBE)-grown conventional core−shell (C−S) n-i-p GaAsSb nanowires (NWs) and a novel hybrid axial C−S n-i-p GaAsSb ensemble NW-based near-infrared photodetector (NIRPD) on nonpatterned Si substrate are demonstrated. The conventional room-temperature (RT) C−S n-i-p GaAsSb NW with a high responsivity of 190 A/W and a higher detectivity of 1.1 × 10 14 Jones at −1 V bias and wavelength of 1.1 μm is reported by optimizing the intrinsic region thickness and appropriately compensating the intrinsic p-type behavior with n-dopant Te. Furthermore, hybrid axial C−S n-i-p GaAsSb has been band-gap-engineered for wavelength up to 1.5 μm, exhibiting responsivity of 18 A/W and detectivity of 1.1 × 10 13 Jones operating at RT. In this hybrid design, we have combined both axial and radial intrinsic (i-) segments of different Sb% compositions to enhance the photoabsorption in the NIR region; hence, the photogenerated current and also the high-band-gap axial i-region help to suppress the trap-assisted tunneling mechanism, which is found to be advantageous over conventional C−S NW architectures. In addition, high rectification ratio from current−voltage (I−V) measurements, suppression of low-frequency noise, lack of 1/f noise, a low corner frequency of ∼2.5 Hz beyond which there is the presence of only frequency-independent white noise from low-frequency noise (LFN) measurements, and bias-and frequency-dependent capacitance−voltage (C−V) measurements suggest the formation of a high-quality C−S junction in the hybrid structure. Thus, our findings reveal that the hybrid axial C−S NW architecture provides the flexibility of three-dimensional (3D) design, which offers an unprecedented prospect for expanding IRPD and other next-generation optoelectronic device applications.

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Photoluminescence properties of Te doped AlGaAsSb alloys

Cited by 11 publications

References 36 publications

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP

Pressure‐Dependent Behavior of Defect‐Modulated Band Structure in Boron Arsenide

MBE-Grown Hybrid Axial Core–Shell n-i-p GaAsSb Heterojunction Ensemble Nanowire-Based Near-Infrared Photodetectors up to 1.5 μm

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