Abstract:Main parameters of InGaAs/InAlAs multiple quantum well amplitude modulators, such as contrast ratio, insertion loss and chirp parameter, were calculated in order to find a quantum well structure which optimizes them. The parameters were estimated from the theoretical absorption curves, which were calculated for different values of applied reverse bias and were compared with experimental data. A study of the device parameters as a function of the Ga content and operation voltage was performed. The study showed … Show more
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