Magnetic nanostructures for lateral spin-transport devices

Abstract

We review our investigations on nanostructured ferromagnets fabricated on semiconductor heterostructures. We show that ballistic electrons in the semiconductor are in particular sensitive to local stray fields. The reversal of the ferromagnets give rise to characteristic magnetoresistance traces in the ferromagnet/semiconductor hybrid structures. We use these stray-field effects for detailed studies on the magnetic properties of rectangular micromagnets, nanodisks and nanorings. The nanostructures might be favorable candidates for ferromagnetic contacts in future spin-injection experiments in lateral feromagnet/semiconductor hybrid structures.

Zero- and one-dimensional magnetic traps for quasiparticles in diluted magnetic semiconductors

“…Currently, there is an increasing interest in using the spin of particles, in addition to their charge, as the basis for new types of electronic devices 1,2,3 . In this work we show by theoretical calculations that the spin degree of freedom can be utilized for achieving spatial localization -of interest for "spintronic applications" -of charged quasi-particles (electrons, holes or trions 4,5 ), as well as of neutral complexes, such as excitons 4,6 .…”