2004
DOI: 10.1590/s0103-97332004000400002
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STM light emission spectroscopy of individual quantum wells: measurement of transport parameters in real space

Abstract: By spectroscopically analyzing the light emitted from the tip-sample gap of the scanning tunneling microscope (STM), we have investigated the carrier transport as well as the luminescence properties of AlGaAs/GaAs quantum wells (QW's). The emission intensity form a target well was measured as a function of the tip position on a cleaved (110) surface of the QW structures. The thermalization length and the diffusion length of the injected electrons were determined in real space.

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“…The process results in a wide spectral light distribution, which reflects the plasmonic cavity modes between the two metal contacts 9, 16, 17. STM‐induced luminescence (STL) has moreover been applied to study surfaces of inorganic bulk semiconductors 18–20 providing local information of electron–hole recombination. Within the last decade luminescence detection became a more widely applied extension to STM for the characterization of semiconductors and due to an increasing interest in the luminescence from organic substances.…”
Section: Introductionmentioning
confidence: 99%
“…The process results in a wide spectral light distribution, which reflects the plasmonic cavity modes between the two metal contacts 9, 16, 17. STM‐induced luminescence (STL) has moreover been applied to study surfaces of inorganic bulk semiconductors 18–20 providing local information of electron–hole recombination. Within the last decade luminescence detection became a more widely applied extension to STM for the characterization of semiconductors and due to an increasing interest in the luminescence from organic substances.…”
Section: Introductionmentioning
confidence: 99%