2002
DOI: 10.1590/s0103-97332002000200056
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Electron mobility in nitride materials

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Cited by 19 publications
(8 citation statements)
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“…An analogous case, but at the quantum mechanical level, is the one of carriers embedded in the ionic lattice in doped or photoinjected semiconductors (see for example Refs. [41][42][43][44][45][46][47][48]). …”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…An analogous case, but at the quantum mechanical level, is the one of carriers embedded in the ionic lattice in doped or photoinjected semiconductors (see for example Refs. [41][42][43][44][45][46][47][48]). …”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…Poderosas teorias estocásticas estão também disponíveis dentro do enfoque sinergético de Haken [42]. Como descrito há algum tempo [19], nosso Grupo no IFGW-Unicamp tem proposto que em certas situações um tratamento ao nível microscópico (molecular e atômico) para evidenciar e descrever estruturas dissipativas auto-organizadas pode ser constituído pela mecânica estatística de não-equilíbrio, que aplicamos ao caso de sistemas semicondutores dopados [59][60][61][62] e fotoexcitados [63][64][65] e sistemas biológicos modelados [30].…”
Section: Como Realizar Esse Programa?unclassified
“…Seeking a better understanding of the carrier transport in ZnS(WZ) and in ZnS(ZB), a theoretical study of the electron drift velocity was performed in this work. For this, we used a kinetic theory for far-from equilibrium systems: the "Non-Equilibrium Statistical Operator Method" [15], which provides an elegant, practical, and physically clear picture of irreversible processes [16,17]; for example, in far-from equilibrium semiconductors [18][19][20][21][22], which is the case considered here. This method was used in numerous works for studying transport processes and kinetic phenomena (e.g., [23][24][25]).…”
Section: Introductionmentioning
confidence: 99%