Hole transport characteristics in pure and doped GaSb

Marega, E.

doi:10.1590/s0103-97332002000200044

Cited by 4 publications

(1 citation statement)

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“…Such as quantum well (QW), quantum well wires (QWW), quantum dot (QD) and superlattice (SL), with very precisely controlled sizes and sharp interfaces. The physical properties of superlattices such as optical and electronic transport characteristics [1][2][3][4][5][6][7][8] differ from those of the bulk semiconductor constituents because the transition symmetry is broken. It is expected that these characteristics will be more pronounced as the electronic confinement increases with further reduction of dimensions [9][10].…”

Section: Introductionmentioning

confidence: 99%

Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga1−xAlxAs superlattice

Abouelaoualim¹

2005

Semicond. phys. quantum electron. optoelectron.

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The binding energy of shallow hydrogenic impurity in GaAs-Ga 1−x Al x As superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation and the new analytic wave function of superlattice. The binding energy is calculed and analyzed for various applied magnetic field, different impurity position and superlattice with different widths. The result show that the impurity binding energy depends strongly on the impurity position and magnetic field. It is also found that for impurities located at the center of the quantum wells of superlattices the binding energy always increases with the applied magnetic field.

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