On the morphology of films grown by droplet-assisted molecular beam epitaxy

Si Doped GaAs (001) Films

“…Figure 2 shows the AFM images of the 2 samples along the [1-10] direction can be observed and their size and concentration decrease when the amount of Ga in each cycle is lowered. This is mainly due to the fact that, under this special growth condition, the first Ga layer covers the whole surface while the excess of Ga material forms droplet spread all over the surface that act as reservoirs of Ga material in order to form the GaAs:Si layers during the annealing under As flux [12,13]. It is clear from Fig.…”

Characterizations of p-type GaAs Films

“…Figure 2 shows the AFM images of the 2 samples along the [1][2][3][4][5][6][7][8][9][10] direction can be observed and their size and concentration decrease when the amount of Ga in each cycle is lowered. This is mainly due to the fact that, under this special growth condition, the first Ga layer covers the whole surface while the excess of Ga material forms droplet spread all over the surface that act as reservoirs of Ga material in order to form the GaAs:Si layers during the annealing under As flux [12,13]. Fig.…”

MOVPE Growth of Mg-doped GaAs Films

“…Figure 2 shows the AFM images of the 2 samples along the [1-10] direction can be observed and their size and concentration decrease when the amount of Ga in each cycle is lowered. This is mainly due to the fact that, under this special growth condition, the first Ga layer covers the whole surface while the excess of Ga material forms droplet spread all over the surface that act as reservoirs of Ga material in order to form the GaAs:Si layers during the annealing under As flux [12,13].…”