“…[7][8][9] Finally, in epitaxially grown thin films, the strain induced by lattice mismatch can lead to the formation of dislocations at interfaces. [10][11][12] In the case of free surfaces, defects such as steps, terraces, or hillocks, have been experimentally observed to be favored places for the formation of dislocations, 13 a likely explanation being that they can locally concentrate the strain. However, experiments can hardly provide information at the smallest scales involved in the very beginning of the dislocation nucleation.…”