2002
DOI: 10.1590/s0103-97332002000200034
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Surface instability and dislocation nucleation in strained epitaxial layers

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“…In epitaxially-grown thin films, misfit induces a strain and can lead to the formation of dislocations at interfaces [13,14,15]. The presence of defects in a surface, such as steps, terraces or hillocks, can also initiate plasticity [16].…”
mentioning
confidence: 99%
“…In epitaxially-grown thin films, misfit induces a strain and can lead to the formation of dislocations at interfaces [13,14,15]. The presence of defects in a surface, such as steps, terraces or hillocks, can also initiate plasticity [16].…”
mentioning
confidence: 99%
“…[7][8][9] Finally, in epitaxially grown thin films, the strain induced by lattice mismatch can lead to the formation of dislocations at interfaces. [10][11][12] In the case of free surfaces, defects such as steps, terraces, or hillocks, have been experimentally observed to be favored places for the formation of dislocations, 13 a likely explanation being that they can locally concentrate the strain. However, experiments can hardly provide information at the smallest scales involved in the very beginning of the dislocation nucleation.…”
Section: Introductionmentioning
confidence: 99%