Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells

Ribeiro, F. J.; Capaz, R. B.; Koiller, Belita

doi:10.1590/s0103-97332002000200018

Cited by 2 publications

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“…Optical experiments on electric field-tunable quantum wells make manifest the electric field-controllability of the optical response of these structures [32]. An applied electric field modifies the potential energy profile of the structure and accordingly alters the subband energy levels [33].…”

Section: Introductionmentioning

confidence: 99%

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Şakiroğlu

2017

SDÜ Fen Bil Enst Der

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Abstract:The effects of a static electric field on the nonlinear optical rectification, second-and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.

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Section: Introductionmentioning

confidence: 99%

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Şakiroğlu

2017

SDÜ Fen Bil Enst Der

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Switching times in electric-field-tunable GaAs/AlAs heterostructures

Ribeiro

Capaz

Koiller

2002

Applied Physics Letters

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Optical experiments on electric-field-tunable AlAs/GaAs heterostructures demonstrate that the optical nature of these structures can be directly controlled by an applied electric field. We present calculations performed within the tight-binding supercell formalism, taking into account the effects of the heterostructure geometry and of the external uniform electric field. We describe the temporal and spatial evolution of the relevant electronic states. The electric-field intensity needed to cause the indirect–direct transition is obtained in good agreement with the experimental results for comparable heterostructure geometry. We present simple and reliable expressions to estimate the switching time scales involved in such processes.

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Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells

Cited by 2 publications

References 0 publications

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Electric-field-induced Nonlinear Optical Rectification, Second- and Third-harmonic Generation in Asymmetrical Quantum Well

Switching times in electric-field-tunable GaAs/AlAs heterostructures

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