Abstract:Acceptor binding energies in zinc-blende semiconductors are determined within the tight-binding formalism. The importance of tting the valence-band masses in the 100 as well as 111 directions is discussed, and parametrizations that speci cally t the valence-band anisotropy are used to calculate Ge acceptor levels in AlxGa1,xAs alloys. The sensitivity of the calculated energies to the parameters that determine bulk masses is investigated, as well as the e ect of varying the on-site energy of the impurity. A com… Show more
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