InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth

Abstract

mm is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.]]>